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Nanocrystal Diamond SEE Layer for MCP’s
Qing Peng, Anil U. Mane, Jeffrey W. Elam Energy Systems Anirudha V. Sumant Center for Nanoscale Materials Jokela, Slade J.; Veryovkin, Igor V. Material Science Division Henry J. Frisch HEP Argonne National Laboratory
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Motivation To achieve well-defined strike in the operation of MCPs, which could significantly decrease the widths of the transition time spread and single photon charge distributions.
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Microchannel Plate (MCP) Configuration
Functionalized by ALD Electrode Coating Cross section Top view Dia: um
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High SEE for Enhancement of Signal
Electrode layer ALD SEE layer High SEE layer From Diamond Resistive layer Substrate
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Diamond as High SEE candidate by PECVD
Ultrananocrystal Diamond by CNM-ANL At <400C
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Nanocrystal Diamond Film as Substrate for SEE testing
Substrate for diamond: Si substrate with W coating ( W is the nucleation layer for diamond) Thickness of the diamond: nm Si substrate size is around 1 inch square.
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The nanocrystal diamond as high SEE layer
Deposition conditions: Deposition Temperature <450C. Size of diamond crystal is 2-5 nm 98% diamond phase Electrical insulating Position of diamond coating: Top surface of MCP above the electrode coating Top um section of the channels Concerns: It is better to remove the solution based seeding process for diamond growth What kind of aspect ratio structure, the diamond film could be deposited into.
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