1. 600V and 300V Test Report

2. Customer Test Reports
These are just a few of the test reports we have collected from satisfied customers. Customer names have been removed to protect their confidentiality.

3. 8A Q-Series more efficient than 15A UltraFast
Q-Series diode runs 6°C cooler
FETs runs 2.4 to 6°C cooler
Customer test report compares a 15A diode from IR with our 8A Q-Series Rectifier.
Efficiency is .71% higher with Qspeed.
MOSFETs run up to 6 °C cooler with Q-Series
Q-Series itself runs 6.1 °C cooler
Easy to use / drop in replacement
No design work needed
Minor design changes could result in larger efficiency gains
No SilPad needed. 600V Q-Series is internally self isolated.
.7% Higher Efficiency than UltraFast diode
2018/11/12

4. 8A Q-Series replaces 10A SiC saving $2.80
Customer test report comparing SiC diode from Cree versus Q-Series:
Efficiency is within 0.2%
MOSFETs run 4.5°C cooler with Qspeed
Almost all other components run cooler with Q-Series
This customer was paying $4.00 for Cree SiC diodes. Q-Series would be < $1.40.
FETs run ~4.5°C cooler
With Q-Series
Efficiency within .2%
2018/11/12

5. Q-Series Saves $1.10 & Boosts Efficiency .5% in 1kW
Customer was using 4 CoolMOS FETs and a 15A UltraFast diode for PFC
Customer eliminated 1 CoolMOS FET for net BOM savings of $1.10
Also .5% efficiency boost
1 kW power supply, PFC & kHz w/CM4800, 90VAC, TA=25°C
Original Design
Q-Series 1st Pass
Q-Series final
Actives
PFC diode = 1x RHRP1560
FET = 4x SPW20N60C3
PFC diode = 1x LQA08TC600
FET = 3x SPW20N60C3
Temps
TC(diode) = 90°C
TC(FET) = 90°C
TC(diode) = 70°C
TC(FET) = 70°C
Efficiency
XX %
XX +0.5%
BOM cost impact
---
Diode +$0.70
Diode +$0.70, FET -$1.8
NET: lower $1.10
* Note also: Q-Series passed = 50C; RHRP ran away & self-destructed
2018/11/12

6. Q-Series can perform better than SiC
This note from a leading edge North American power supply company, shows Q-Series can replace SiC and can even perform better.
“We did some testing with the LQA08TC600 Qspeed ( boost diode. It has almost identical performance to the SiC Cree diode (CDS04060A). All testing was done in a 1U 700W (12V/58A, 5V/1A) at room temperature. Note that the Qspeed part is internally self isolated. No sil pad is needed.”
CREE CDS04060A (with sil pad)
86.9% efficiency
Tcase = 83.4C
Qspeed LQA08TC600 (with sil pad)
87.0% efficiency
Tcase = 110.8C
Qspeed LQA08TC600 (without sil pad)
87.3% efficiency
Tcase = 84.2C
2018/11/12

7. Q-Series close to SiC and 1.3% more eff than UltraFast
SiC and Q offer ~ same MOSFET Temp, while UltraFast causes FETs to run 20°C hotter
83.0%
83.8%
83.6%
83.3%
82.0%
SiC and Q are within .2% to .3% in efficiency
Q-Series offers 1.3% higher than UltraFast at 135kHz
Also note 8A Q replaces 15A UltraFast
2018/11/12

8. Q-Series within .3% of SiC but at lower $$$
1KW Power the following conditions
- PS2 Mechanical Size
- 90VAC/50HZ Line Input
- 90 KHz Synchronized Frequency in PFC and PWM,
- 4 pcs SPW20N60C3 in PFC Stage (no snubber circuit)
- 2 pcs IXKH35N60C5 in Dual Forward PWM Stage
- Tamb = 25 degreeC
LQA08TC600
IDT08S60C
Efficiency
939.39W / 1279W = 73.44%
938.89W / 1274W = 73.7%
< $1.15
~ $2.40 to $4.00
2018/11/12

9. Q-Series within .3% of SiC – Saves $1.10
Comparing Qspeed 8A to SiC 6A
Input = 90Vac
Output = 750W
Tamb. = 25℃
Qspeed SiC
Input power(常溫)     W        W
Efficiency % %
Tamb. = 50℃
Qspeed         SiC
      Input power             W         887W
Efficiency % %
                               Diode Temp.          ℃ ℃
MOSFET Temp.      ℃ ℃
Q-Series within .3% of SiC at 25°C
Q-Series has .3% higher efficiency than SiC at 50°C TA
Q-Series will usually run hotter than SiC – this is normal
2018/11/12

10. Using 2 Q-series in Parallel saves > $1.40
This customer used 2x 8A Q-Series in parallel to replace a single 10A SiC at 1100 Watts.
The 2 Q cost $1.40 less than the single 10A SiC.
Efficiencies were within .2%.
The Q-Series ran cooler themselves due to better heat spreading over two devices.
2018/11/12

11. Q-Series operates fine at 225kHz PFC
3rd party independent testing validates Q-Series is the most energy efficient silicon rectifier technology available today.
Qspeed can replace SiC and save you $.65 to $3.00 per supply.
Q-Series operates at 225 kHz
Cree / Infineon SiC
Qspeed ST
Fairchild IR
Thermal
Run-away
2018/11/12

12. Take the Qspeed Challenge
We are so confident that our Q and X-Series Rectifiers will provide you with the best price - performance that we will do the comparison testing for you.
Give us 3 to 5 identical power supplies.
Step 1: Diode comparison with no circuit changes
Step 2: Optimization with minor circuit changes
Step 3: Test report
To find out more about the Qspeed Challenge, contact Stu Hodge our Director of Applications Engineering:
2018/11/12

13. Save on Q-Series – Use the money elsewhere
Compared to SiC, Q-Series will save you $1.00 to $1.40 per supply
On a $25 supply that is 5% savings
Our recommendation:
Design around Q-Series and use SiC as a 2nd source
Use the savings to buy higher efficiency or to increase your profit
2018/11/12

14. 10uS Surge / In-Rush Current – The Achilles Heel of SiC
This chart shows the highest surge / in-rush current the diodes survived before failing.
Q-Series Rectifiers have over 5x to 8x the surge current capabilities of SiC diodes.
4A SiC passes 75A, fails 100A
3A Q-Series passes 575A, fails 600A
This test circuit had a 600A limit.
A higher current circuit is now in development.
2018/11/12

15. LXA06TC600 v.s. IR8ETH06 in Seasonic 550W 80+ Power Supply
2018/11/12

16. Boost Diode Efficiency @ Tamb = 25℃
100V/60Hz
LOAD
Efficiency(%)
LXA06TC600
IR8ETH06 0%
0.00%
10%
75.81%
75.40%
20%
81.30%
81.02%
50%
84.21%
84.04%
80%
82.15%
81.91%
100%
80.03%
79.70%
LXA08TC600 is better than > 0.33%
2018/11/12

17. Boost Diode and MOSFET Temp. @ Tamb = 50℃
100V/60Hz
Result
Tamb. = 50℃, 100% Load
LXA06TC600
IR8ETH06
Diode Temp.
94.7
108.15
MOSFET Temp.
88.1
93.9
Diode is hotter than > 13.45℃
MOSET is hotter than > 5.8℃
2018/11/12

18. Conduction EMI – 110V and 230V
110V / 60Hz
Result
Tamb. = 25℃, 100% Load
LXA06TC600
IR8ETH06
MHz
66.14dB
67.56dB
230V / 60Hz
Result
Tamb. = 25℃, 100% Load
LXA06TC600
IR8ETH06
MHz
67.56dB
68.82dB
LXA08TC600 is better > 230V Conduction EMI
2018/11/12

19. Radiation EMI – 110V and 230V
110V / 60Hz
Result
Tamb. = 25℃, 100% Load
LXA06TC600
IR8ETH06
MHz
60.99dB
58.54dB
230V / 60Hz
Result
Tamb. = 25℃, 100% Load
LXA06TC600
IR8ETH06
MHz
61.39dB
61.62dB
LXA08TC600 is better > 230V Radiation EMI
2018/11/12

20. X-Series Diode Test Example – (2)
Comparing LXA06T600 to SF10L60U
Input = 90Vac
Output = 400W
Tamb. = 25℃
Qspeed Shidengen
MOSFET(1)温度
MOSFET(2)温度
2018/11/12

21. 75V Input, 24V/200W Output DC/DC Converter
1. Output Rectifier Diode Voltage Stress Comparison :
- LQA16TC300 and 20CTH03S
2018/11/12

22. 75V full load /100MHZ diode stress
Max. Peak Voltage Tamb. = 100℃
LQA16TC300 without Snubber Circuit
2018/11/12

23. Max. Peak Voltage 332V @ Tamb. = 100℃
20CTH03S with Snubber Capacitor 220P，Resistor: 33ohms.
2018/11/12

24. 2. Output Rectifier Diode Efficiency Comparison :
- LQA16TC300 and 20CTH03S
2018/11/12

25. LQA16TC300，without snubber，efficiency shown as below：
Test Condition
Primary Side
Output Power
Output
Current
Voltage
Efficiency
75V，28℃
235.4
8.2818
24.09
84.75%
75V，100℃
236.4
8.2837
23.942
83.89%
2018/11/12

26. 20CTH03S，with Snubber Capacitor 220pF and Resistor 33ohm，efficiency shown as below：
Test Condition
Primary Side
Output Power
Output
Current
Voltage
Efficiency
75V， 28℃
235.9
84.64%
75V， 100℃
240.7
82.39%
Much Poor Than LQA16TC300 > 1.5%
2018/11/12