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Supplementary Slides for Lecture 22

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Presentation on theme: "Supplementary Slides for Lecture 22"— Presentation transcript:

1 Supplementary Slides for Lecture 22
EE130/230M Spring 2013

2 The Impact of MOSFET Scaling
1971 2012.5 # of Transistors: billions Performance: KHz > 3 GHz Multiple-Core

3 Ideal Long-Channel MOSFET
(At Saturation Region)

4

5 Non-Idealities in Long-Channel MOSFET
Effective Oxide Thickness (Lec.18; Hu 5.8 ) Field-Effect Mobility (Lec.20, S4; Hu 6.3; Pierret ) Body Bias Effect (Lec.20, S14; Hu 6.4; Pierret ) body-effect parameter m = 1 + 3Toxe/Wdep body-effect factor Channel Length Modulation (Lec.20, S18; Hu 7.9)

6 Additional Issues in Short-Channel MOSFET
Short-Channel Effect (Lec.22, S12; Hu 7.9; Pierret ) Drain-Induced Barrier Lowering Source/Drain Series Resistance Band-to-band Tunneling Velocity Saturation (Lec.22, S4; Hu 6.8-9; Pierret )


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