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A Simulation Model for Crowbarring Thyristor Devices

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Presentation on theme: "A Simulation Model for Crowbarring Thyristor Devices"— Presentation transcript:

1 A Simulation Model for Crowbarring Thyristor Devices
By Devender Kasturi

2 University of North Texas
Advisory Committee Major Advisor Dr. Albert B. Grubbs. Committee Members Dr. Vijay Vaidyanathan Dr. Monty Smith Industrial Representative Mr. Phillip Havens 11/15/2018 University of North Texas

3 University of North Texas
Overview Introduction Definition of terms Background of the Problem Problem Statement Purpose of the study Methodology Review of Literature 11/15/2018 University of North Texas

4 University of North Texas
Overview Research Questions Assumptions Limitations Hypothesis Expected Outcomes Significance of the study Time Line Questions and Suggestions 11/15/2018 University of North Texas

5 University of North Texas
Introduction Causes for damage of Electronic equipment: Wear and tear Overvoltage Overcurrent 11/15/2018 University of North Texas

6 Overvoltage & Overcurrents
Lightning Power line cross Conductive spikes Inductive spikes 11/15/2018 University of North Texas

7 University of North Texas
Definition of Terms VDRM : Peak Standoff voltage across the device in the off condition. IDRM : Maximum value of leakage current at VDRM. VT : Voltage across the device after it has turned on. 11/15/2018 University of North Texas

8 University of North Texas
Definition of Terms VS : Maximum voltage across the SIDACtor device just before switching on. IH : Minimum amount of current required to maintain the device in the on state. Surge waveform(ex: 10x700sec) 11/15/2018 University of North Texas

9 VI characteristics of SIDACtor device
11/15/2018 University of North Texas

10 Background of the Problem
The SIDACtor® device Characteristics of actual model Existing SPICE model Comparison of actual device and existing PSpice model for a 10x700us surge. 11/15/2018 University of North Texas

11 Actual Device (P3100) Characteristics
Overshoot = (app) 300V VT = (app) 3.5V 11/15/2018 University of North Texas

12 Existing PSpice Model (P3100)
Overshoot = 1.01 KV VT = 100V 11/15/2018 University of North Texas

13 Actual device Vs Existing model
Overshoot of PSpice model is more than 3 times than that of actual device’s. VT is very high for the PSpice model. 11/15/2018 University of North Texas

14 University of North Texas
Statement of Need There is a need for a new PSPICE model of the SIDACtor device. 11/15/2018 University of North Texas

15 University of North Texas
Problem Statement The problem is the characteristics of the actual device and that of the existing simulation model do not match. 11/15/2018 University of North Texas

16 University of North Texas
Purpose of the Study To develop a PSpice model by modifying the existing PSpice model or To develop a new PSpice model. Test the newly developed model for various surge waveforms. 11/15/2018 University of North Texas

17 University of North Texas
Research Questions Will the new simulation model have the same characteristics as that of actual device? How reliable is the PSpice simulation software? What is the range of operating temperature for the device? 11/15/2018 University of North Texas

18 University of North Texas
Methodology Experimental First the existing model is built and tested. Research will be done and the changes that have to be done are identified. 11/15/2018 University of North Texas

19 University of North Texas
Methodology Model is changed and tested for various surge events. Repeat steps 2 and 3 until the simulation model characteristics are within 10% of that of actual device. 11/15/2018 University of North Texas

20 University of North Texas
Review of Literature Circuit simulators employ Newton’s method to solve the nonlinear systems of equations that are formed during DC and transient analysis. Convergence problems can occur due to poor starting points defined for the simulation. 11/15/2018 University of North Texas

21 University of North Texas
Review of Literature Errors in specifying circuit connectivity, component values, or model parameter values often cause convergence problems. 11/15/2018 University of North Texas

22 University of North Texas
Review of Literature SIDACtor’s working is similar to that of a thyristor except: No gate current can be applied to the SIDACtor SIDACtor is bidirectional 11/15/2018 University of North Texas

23 University of North Texas
Assumptions Actual device works properly Test equipment works properly 11/15/2018 University of North Texas

24 Equation for Current through the thyristor:
Where Ico1 and Ico2 are leakage currents from collector to base and 1 and 2 current amplification factors 11/15/2018 University of North Texas

25 University of North Texas
Limitations Resources PSPICE software Test Equipment 11/15/2018 University of North Texas

26 University of North Texas
Hypothesis Null Hypothesis The characteristics of the newly developed PSpice model and that of actual device differ by more than 10%. 11/15/2018 University of North Texas

27 University of North Texas
Hypothesis Alternative Hypothesis The characteristics of the newly developed PSpice model and that of actual device differ by no more than 10%. 11/15/2018 University of North Texas

28 University of North Texas
Expected Outcomes The newly developed PSpice model will exhibit a lower overshoot. The newly developed PSpice model will exhibit a lower VT value. The newly developed PSpice model successfully clears all the tests. 11/15/2018 University of North Texas

29 Significance of the Study
The simulation model is used for tests rather than the actual device allowing any modifications under considerations to be tested. Eventually expedites prototype testing. 11/15/2018 University of North Texas

30 University of North Texas
Timeline April 2003 – Review of Literature and current model. Summer 2003 – Experimental Analysis and Report Writing Fall 2003 – Final Report 11/15/2018 University of North Texas

31 Questions & Suggestions
11/15/2018 University of North Texas


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