1. MG CMOS Al Al SiO2 SiO2 P+ N+ N P
Len pre potrebu SEI a.s. (For SEI a.s. use only)

2. MG CMOS invertor Metal Gate CMOS Invertor
Invertor je základným prvkom logických obvodov. V prípade technológie CMOS sa skladá z p a n kanálového tranzistora v komplementárnom zapojení.
The invertor is a basic of logical circuits. For CMOS (Complementary MOS) technology is constructed with p and n channel devices. p n U UG
USS
UDD
U [V]
UG [V] I Al N
SiO2 P+ Al P
SiO2 N+
Len pre potrebu SEI a.s. (For SEI a.s. use only)

3. MG CMOS štruktúra MG CMOS Cross Section
Si typ N á100ń - fosfor (Phosphorus) 3,5-6,5 Wcm
SiO2
P-jama (P-Well) - bór (Boron) 6,5 mm, 1,1kW/o
AlSi 1mm
P+ 2,2 mm, 46W/o
PSG 820nm
N+ 1,9 mm, 24W/o
Si3N4 650nm
Len pre potrebu SEI a.s. (For SEI a.s. use only)

4. BBr3 B
Len pre potrebu SEI a.s. (For SEI a.s. use only)

5. POCl3 P
Len pre potrebu SEI a.s. (For SEI a.s. use only)

6. Len pre potrebu SEI a.s. (For SEI a.s. use only)