1. North America HB-LED Committee (High-Brightness Light-Emitting Diode)
Liaison Report
February 2011

2. Outline Leadership Organization Chart
Highlights from Nov 11, 2010 Kick-off Meeting
Task Force Reports
Highlights from Feb 23, 2011 Meeting
In conjunction with Strategies in Light
Upcoming Meeting Schedule
February 2011
NA HB-LED Committee

3. Leadership Committee Co-chairs Iain Black (Philips Lumileds)
HB-LED device and module producer
Bill Quinn (Veeco)
MOCVD System Producer
Chris Moore (Semilab)
HB-LED Metrology Producer
Sunil Phatak (Rubicon)
Sapphire Wafer Producer
February 2011
NA HB-LED Committee

4. Current Committee Structure
North America HB-LED Committee
Iain Black (Philips Lumileds) Bill Quinn (Veeco) Chris Moore (Semilab) Sunil Phatak (Rubicon)
HB-LED Wafer TF
Sunil Phatak (Rubicon)
HB-LED Factory Automation Interface TF
Daniel Babbs (Brooks) Jeff Felipe (Entegris)
HB-LED Assembly TF
Paul Reid (Kulicke & Soffa)
February 2011
NA HB-LED Committee

5. NA HB-LED Committee Kick-off Meeting Nov 11 in conjunction with NA Standards Fall 2010 Mtgs
Attendance
18 people in person (+15 people on the phone)
Companies represented include:
Aixtron, AMAT, Brooks Automation, Cimetrix, Entegris, Kulicke & Soffa, Oxford Instruments, Philips, Semilab, SUMCO, Veeco
Four TFs proposed
Wafers, Carriers, Assembly, Automation
Approved formation of the HB-LED Wafer Task Force
February 2011
NA HB-LED Committee

6. Task Force Updates HB-LED Wafer TF Charter:
Define physical geometry of wafers used in HB-LED manufacturing starting with 150 mm diameter sapphire wafers
Participating companies include:
OSRAM, GT Crystal Systems, SUMCO, Veeco, Silian, AIS Automation, Novellus, Kulicke & Soffa, Oxford Instruments, LayTec
February 2011
NA HB-LED Committee

7. Task Force Updates HB-LED Wafer TF (cont’d)
First TF meeting held January 10 and identified the following priorities:
Wafer Fiducial (notch vs flat)
Wafer ID Mark
Center Point Thickness/TTV, Warp, Bow, and other “flatness” parameters
Bulk Characteristic Issues
Second TF meeting held January 28
Technical discussion on preliminary values for 150 mm sapphire wafers for use in HB-LED device fabrication
Diameter tolerance, center point thickness, TTV, bow & warp, orientation fiducial, ID mark, surface finish, edge profile, edge finish
TF developing a survey covering these topics, to be deployed in early March for input
February 2011
NA HB-LED Committee

8. Task Force Updates HB-LED Equipment Automation Interfaces TF
Formerly Carrier TF and Automation TF
Motivations for combining
HB-LED Factory Requirements still developing
The carrier is one component of the factory automation system
But, it is the interface to multiple other components
Load port, storage, lot ID, etc
A combined TF will benefit from having all suppliers participate in the discussion of these interfaces and their inter-dependencies.
As the basic requirements unfold sub-groups will be formed for focused discussion on each component of the factory automation.
February 2011
NA HB-LED Committee

9. Task Force Updates HB-LED Equipment Automation Interfaces TF (cont’d)
Charter
Define physical interfaces of substrate carriers as well as process and metrology tools of wafer/substrate carriers used in HB-LED manufacturing
Participating Companies include:
Brooks Automation, Entegris, OSRAM, Aixtron, Veeco, AIS Automation, Novellus, Applied Materials, MKS Instruments, Oxford Instruments, and Kulicke & Soffa.
February 2011
NA HB-LED Committee

10. Task Force Updates HB-LED Equipment Automation Interfaces TF (cont’d)
First TF meeting held January 11 and discussed the following:
Developing a common vision for the future HB-LED factory depicting how each of the factory elements would interface together
Including software communications as well as process carriers and transport carriers in the TF scope
Identifying which existing standards can be reused and only focus on the areas which are unique to LED
Deciding on terminology for each of the carrier types which exist within an HB-LED factory
February 2011
NA HB-LED Committee

11. Task Force Updates HB-LED Assembly TF Charter
Define physical and packaging attributes of die-level conductor elements as they relate to being optimized for handling and processing by common assembly and other equipment, employing automatic material handling, pattern recognition, interconnect, and assembly systems that are used in HB-LED manufacturing
Participating companies include:
Kulicke & Soffa, Amkor, TSMC, Silian, Veeco, Brooks Automation, Entegris
February 2011
NA HB-LED Committee

12. Task Force Updates HB-LED Assembly TF (cont’d)
First TF meeting held February 3
Reviewed Assembly Task Force TFOF
Agreement on definitions and terminology
Quick review of LED "Assembly"
to spur some thoughts from those not in assembly
A touch of LED wire bonding challenges
Material handling variations, vision, wire loops
Suggestions for next meeting
Brainstorming/collecting inputs on directions to take
Looking for lowest hanging fruit to standardize
February 2011
NA HB-LED Committee

13. TF Meetings at Strategies in Light February 23, 2011
Meeting Schedule
Wednesday, February 23
HB-LED Wafer TF (1:00 PM to 2:00 PM)
HB-LED Equipment Automation TF (2:00 PM to 3:00 PM)
HB-LED Assembly TF (3:30 PM to 4:30 PM, Pacific)
Santa Clara Convention Center in Santa Clara, California
Attendance
30 in person (+ 5 people on the phone)
Companies represented (partial list):
OSRAM, Philips Lumileds, GT Solar, Silian, Aixtron, Veeco, LayTec, AIS Automation, Amkor, Brooks, Entegris, Novellus , Kulicke & Soffa, EV Group, GSI, iNEMI, NeST, Oxford Instruments, PEER Group, Semilab, SUSS MicroTec, TOK
February 2011
NA HB-LED Committee 13

14. TF Meetings at Strategies in Light February 23, 2011
HB-LED Wafer TF
ID Mark
Wafer: flat, notch
Location: backside, wafer edge
Dimensions
Message Content
Wafer edge profile/template
Survey on HB-LED 150 mm diameter sapphire wafer characteristics
Reviewed responses to date
Improvements
Finalize and deploy in early March (broader distribution), review results at NA Spring meetings
Preliminary discussion on format/structure of SEMI draft spec
February 2011
NA HB-LED Committee

15. TF Meetings at Strategies in Light February 23, 2011
HB-LED Equipment Automation Interfaces TF
Presentations
Aixtron, “Ideas to Improve HB-LED Manufacturing by Higher Automation Level”
OSRAM, “Considerations for standardizing basic requirements in fab automation”
LayTec, “Special requirements to communication standards with respect to in-situ data”
Leveraging existing SEMI Standards (e.g., SECS/GEM, Interface A), identifying gaps
To establish agreement on types of carriers used as well as terminology
TF leaders to draft list of terminology then circulate for input
Next TF meeting
Mid-March, date TBD, via teleconference/web meeting
February 2011
NA HB-LED Committee

16. TF Meetings at Strategies in Light February 23, 2011
HB-LED Assembly TF
Reviewed Assembly TF charter and scope
Agreement on definitions and terminology
Review of LED assembly
Scope within LED manufacturing (vs semiconductor)
Wire bonding challenges
Standardization challenges (variations, IP, etc.)
Develop and deploy survey to collect inputs on areas that can be standardized
February 2011
NA HB-LED Committee

17. Calendar Next meeting Fab Manager Forum (Mar 22-23)
Wednesday, March 23 (16:00 – 18:00)
Berlin, Germany
NA Standards Spring 2011 Meetings (Mar 28-31)
Thursday, March 31
Committee and TF meetings, schedule to be finalized
SEMI Headquarters in San Jose, California
February 2011
NA HB-LED Committee 17

18. Thank You!
For more information or participate in any NA HB-LED activities, please contact Paul Trio at SEMI
February 2011
NA HB-LED Committee

19. Backup
February 2011
NA HB-LED Committee

20. Charter for Global and NA HB-LED Standards Committee
To explore, evaluate, discuss, and create consensus-based specifications, guidelines, and practices that, through voluntary compliance, will;
promote mutual understanding and improved communication between users and suppliers of HB-LED materials, carriers, automation systems and devices, and
enhance the manufacturing efficiency and capability and shorten time-to-market so as to reduce manufacturing cost in the HB-LED industry.
February 2011
NA HB-LED Committee

21. Scope for Global and NA HB-LED Committee
To include liaisons and synergies with other SEMI technical committees for the development of HB-LED-related standards.
The HB-LED standards committee scope is limited to exploring and developing standards that pertain to common criteria, guidelines, methods for control and comparison of HB-LED-related materials, carriers and automation systems. It will seek to support the international need for increasing HB-LED product / process yield and reducing related HB-LED costs per Lumen.
In addition to the above, the committee will also facilitate any industry initiatives towards product standardization needs.
February 2011
NA HB-LED Committee

22. Timeline
HB-LED Steering Committee Agreement to form HB-LED Standards Committee
Agreed – Sept 23, 2010
NARSC Endorsement of Petition
Completed – Oct 15, 2010
ISC Approval of Petition
Completed – Nov 4, 2010
First NA HB-LED Standards Committee Meeting
Completed – Nov 11, 2010 (in San Jose)
February 2011
NA HB-LED Committee

23. SDO’s in HB-LED Product Performance and Measurement Standards
Material, Manufacturing and Processing Standards
While several SDOs are working on product performance and measurement standards, no SDOs are active in SEMI's area core competency: Manufacturing standards for materials, equipment, and automation
February 2011
NA HB-LED Committee