1. Hamdy Abd El-Hamida, Benjamin Iñigueza, Jaume Roigb
Analytical Predictive Modeling for the Scalability Study of DG and GAA MOSFETs
Hamdy Abd El-Hamida, Benjamin Iñigueza, Jaume Roigb
a Dept. d’Enginyeria Electrònica, Elèctrica i Automàtica, Universitat Rovira i Virgili, Tarragona, Spain.
bLAAS, CNRS, Toulouse Cedex 4, France

2. Modeling Summary
We have developed analytical scalable models of the threshold voltage roll-off, DIBL and subthreshold swing of nanoscale Gate All Around (GAA) and Double-Gate (DG) MOSFETs
The models are derived from an analytical solution of the 2D or 3D Poisson’s equation, obtained using variable separation
Very good agreement with numerical 2D and 3D simulations have been observed

3. Modeling Applications
The models have been used to compare the performance of nanoscale GAA and DG MOSFETs
We have determined the dimensions of the devices necessary to obtain a certain value of the subthreshold swing
It results that the GAA device can be 33% shorter than the DG MOSFET, and with a 10 mV/V lower DIBL