1. Progress of ALD Group for MCP
Qing Peng, Anil U. Mane, Jeffery W. Elam
Argonne National Laboratory
Third week of September 2009

2. Aluminum doped Zinc Oxide (AZO) growth rate at different conditions
20% ALO cycle
Diethyl Zinc
Trimethyl
Aluminum
Results:
At 200C, with O3 chemistry AZO growth rate is smaller than the growth rate with H2O chemistry for same cycle conditions.
For H2O chemistry, AZO growth rate is smaller at 200C than at 177C

3. Results of AZO coated MCP
Purpose: ALD2 system, coat AZO onto MCP with Si wafers as the control sample.
Conditions
Reaction temperature: 177C
Substrate:
Silicon with unknown resistivity, treated by Acetone/IPA, Then O3 for ~3 minutes.
MCP treated with O3 for ~3 minutes
Cycle conditions (dose/purge/dose/purge): 1/5/1/5 s for both Al2O3 and ZnO,
Cycle Numbers: 800 Cycles
Reactants: TMA/H2O for Al2O3, DEZ/H2O for ZnO.
Substrates: MCP 33 in diameter, IPN: A, polished AND Si wafers with unknown resistivity
Uncoated MCP
MCP
100nm AZO
MCP+100nm AZO+Cr 5nm+Au 50nm

4. Work has been done:
ALD process for AZO is carrying out,
Mercury probe and pico-ammeter for resistant measurement set up
Low resistivity Si wafer ordered
Sample holder for electrode coating is designed.
Mercury probe and Pico-ammeter is set up for measuring high resistant
Work for near future:
Systematic study of ALD process for AZO for the optimal material property.
Automatic measuring system for resistance