1. Si DRIE APPLICATION
In Corial 210IL

2. ICP-RIE equipment for deep Si etching applications
Corial 210IL
11/18/2018
ICP-RIE equipment for deep Si etching applications
Enlarged functionality with capability to deep etch silicon, silicon carbide, glass, sapphire, and quartz
Support time-multiplexed processes (Bosch) in conventional dry etch reactor
Smaller wafer pieces up to full 200 mm wafer
Corial 210IL DRIE Applications

3. performances Si drie process on corial 210IL

4. Si drie on corial 210IL CORIAL Bosch-like process has 3 steps
11/18/2018
CORIAL Bosch-like process has 3 steps
step 1 - Polymer deposition by C4F8 plasma
step 2 - Polymer etching  by SF6 plasma
step 3 - Silicon etching with 20W of RF power, which was used to increase the silicon etching rate
To alternate between each step,
COSMA pulse software is required for pulsing consecutively C4F8 gas flow, SF6 gas flow, LF and RF power
Corial 210IL DRIE Applications

5. COSMA Pulse is a control software that broadens conventional tools’ process capabilities to enable time-multiplexed processes

6. Cosma pulse description
11/18/2018
Advanced Process Control
EASY
recipe programation
ALL PARAMETERS
CAN BE CONTROLLED AND PULSED
10 ms
DATA AQUISITION
+/-0,1%
ACCURACY
ON BIAS FINE TUNING
Corial 210IL DRIE Applications

7. Corial 210IL DRIE Applications
Drie of silicon
11/18/2018
Precise control of the etch profile, fast etch rates, and excellent etch uniformity
Corial 210IL DRIE Applications

8. Drie of silicon Results obtained with 100 mm wafer, 20% Si open area
11/18/2018
Various Aspect Ratios
Feature size
(µm)
Etched depth
Aspect ratio
Etch rate
(µm/min)
Mask
Selectivity
(vs. mask)
Ø250
Through wafer
1:2
> 3.0
SiO2
330
Ø100
515
1:5
> 2.9 PR 85
Ø20
280
1:14
> 1.5
155 Ø5
180
1:35
> 1.0
100
Results obtained with 100 mm wafer, 20% Si open area
Corial 210IL DRIE Applications

9. System description Corial 210IL

10. Corial 210IL DRIE Applications
System description
11/18/2018
General View
THE MOST
COMPACT
MACHINE
ON THE MARKET
ICP source
960
750
360
1570
600
420
390
490
30 %
SMALLER FOOTPRINT
Corial 210IL DRIE Applications

11. Corial 210IL DRIE Applications
System description
11/18/2018
Detailed View
EPD with laser
ICP reactor
Load lock
Pumping system
(TMP 1600l/s and dry pump 110 m3/h)
Chiller / Heater
HV and LV power supplies
ICP generator
(2 KW ICP source)
RF generator
(1 KW RF biasing)
Process controller
Corial 210IL DRIE Applications

12. Corial 210IL DRIE Applications
System modularity
11/18/2018
Detailed View
Substrate handling
Protective liner
RF Power
Pumping system
ICP Power
End Point Detection
Reactor design
Process control software
Corial 210IL DRIE Applications

13. 1 2 Substrate handling Shuttles for single and multi wafer loading
11/18/2018
Loading 1 2
Shuttles for single and multi wafer loading
Quick adaptation to sample shape and size
Optimum process conditions with NO modification of process chamber
Guaranteed no wafer damage due to SOFT wafer clamping
Single wafer loading
Operating range from -80°C to +350°C
Easy adaptation from 4" to 8” substrate handling
Corial 210IL DRIE Applications

14. ICP SOURCE corial 210IL

15. Remote plasma configuration
11/18/2018
BRACE FOR
REMOTE ICP PLASMA PROCESSING
20 min
Reactor dismounting & brace installation
4 min
Pumping down to 10-4 Tor
FAST BRACE installation
1 min
Reactor Venting
5 min
Plasma cleaning
Corial 210IL DRIE Applications

16. Remote plasma configuration
11/18/2018
THE LINER FOR
HARSH ICP-RIE
PROCESSES
EASY LINER replacement by a single person
5 min
Liner replacement
4 min
Pumping down to 10-4 Tor
ZERO
CROSS CONTAMINATION
1 min
Reactor Venting
5 min
Plasma cleaning
Corial 210IL DRIE Applications

17. FAST AND UNIFORM ETCHING
advantages
11/18/2018
High power (2 KW) ICP source producing uniform high density plasma,
High power (1 KW) RF source to ensure high silicon etch rates,
ICP source with the hot quartz liner allowing to diminish loss of reactive species,
Very high conductance pumping system for operation at high gas flow rates,
Helium pressure to ensure the thermal transfer between the cathode, the substrate holder and the substrates,
Aluminum brace between ICP source and vacuum vessel to balance the ion and reactive species fluxes in order to enable Bosch-like processes,
COSMA Pulse software enabling time-multiplexed processing,
Capability to process a wide range of materials including silicon, oxides, nitrides, polymers, metals, III-V & II-VI compound semiconductors, and hard materials after quick hardware conversion.
FAST AND UNIFORM ETCHING
Corial 210IL DRIE Applications

18. usability corial 210IL

19. Process control software
11/18/2018
COSMA
COSMA
CORIAL OPERATING SYSTEM FOR MACHINE
The simplest, most efficient software to develop processes, operate, and maintain CORIAL systems
DESKTOP APPLICATION
Process Editing I Process Adjustment I Process Operation I Process Tracability I System Maintenance
REMOTE CONTROL
MOBILE APPLICATION
Module & Process Follow-Up I Alarms & Warnings Connected Users
NEW
2018
Corial 210IL DRIE Applications

20. Reprocessing software
11/18/2018
COSMA RS
DISPLAY UP TO 4
PARAMETERS FROM A RUN
Simple and efficient software to analyze process runs and accelerate process development
REMOTE
ANALYSIS OF RUNS
DRAG AND DROP
CURVES TO CHECK PROCESS REPEATABILITY
Corial 210IL DRIE Applications

21. End point detection EPD with laser Real-Time etch rate measurement
11/18/2018
EPD with laser
A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the wafer surface and the laser beam impact on it. A 20 µm diameter laser spot facilitates the record of interference signals.
Real-Time etch rate measurement
Real-Time etched depth measurement
Corial 210IL DRIE Applications

22. ICP-RIE equipment for deep Si etching applications
Corial 210IL
11/18/2018
ICP-RIE equipment for deep Si etching applications
Enlarged functionality with capability to deep etch silicon, silicon carbide, glass, sapphire, and quartz
Support time-multiplexed processes (Bosch) in conventional dry etch reactor
Smaller wafer pieces up to full 200 mm wafer
Corial 210IL DRIE Applications