1. Atomic Picture of Crystal Surfaces
Terraces, steps, kinks,
adatoms and vacancies
STM image of vicinal Si(111)
STM image of Si(001)

2. Three Growth Modes s > f + sf With misfit If s > f + sf
Film
Substrate
Layer-by-layer
(Frank-Van der Merwe)
3D islanding
(Volmer-Weber)
Layer-by-layer
followed by 3D islanding
(Stranski-Krastanov)
s: surface energy of substrate
f: surface energy of film
sf: interface energy of substrate-film

3. Stranski-Krastanov growth of Ge on Si(001)
[100]
pyramids
huts
Wetting layer
~ 2.5 ML Ge, 475 °C, (44nm)2
3D islands formation
~ 3.5 ML Ge, 475°C, (110nm)2

4. MBE grown GaAs-AlxGa1-xAs superlattice
Bang gap – lattice constant for alloy semiconductors

5. Misfit Dislocations
Threading dislocation
misfit dislocation

6. Molecular Beam Epitaxy (MBE)

7. Real-time monitoring of MBE using Reflection high-energy electron diffraction (RHEED)
3D growth
RHEED Pattern
Surface reconstruction
Source off
RHEED intensity oscillation

8. Vapor Phase Epitaxy (VPE)
Horizontal reactor
Vertical reactor
Barrel reactor

9. Liquid Phase Epitaxy (LPE)

10. Carrier Mobility & Concentration Measurements
Hall Effect
Doping Profile N(x) w I VH B x x
Van der Pauw Test Pattern
Depletion
zone
N(x)
Schottky
junction V
C(V) = 0A/x