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هاLC نمونه 3: شرکتActel (Act-1): A0 A1 قابليت پياده سازي

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Presentation on theme: "هاLC نمونه 3: شرکتActel (Act-1): A0 A1 قابليت پياده سازي"— Presentation transcript:

1 هاLC نمونه 3: شرکتActel (Act-1): A0 A1 قابليت پياده سازي
SA B0 B1 SB S0 S1 قابليت پياده سازي بسياري از توابع تا 8 ورودي MUXها، FF. مرتضي صاحب الزماني

2 ACT-1 مرتضي صاحب الزماني

3 pASIC مرتضي صاحب الزماني

4 MicroSemi Axcellerator C-Cell
مرتضي صاحب الزماني

5 MicroSemi Axcellerator R-Cell
مرتضي صاحب الزماني

6 LUT مرتضي صاحب الزماني

7 Static CMOS gate vs. LUT Number of transistors: Delay: Power:
NAND/NOR gate has 2n transistors. 4-input LUT has 128 transistors in SRAM, 96 in multiplexer (for LUT decoders, …). Delay: 4-input NAND gate has 9t delay. SRAM decoding has 21t delay. Power: Power consumption of static gates power depends on their activity. SRAM always burns power. مرتضي صاحب الزماني

8  LUT LE is considerably more expensive than a static CMOS gate.
Static CMOS gate vs. LUT  LUT LE is considerably more expensive than a static CMOS gate.  LE Design requires careful attention to circuit characteristics. مرتضي صاحب الزماني

9 Spartan-6 CLB مرتضي صاحب الزماني

10 SliceM مرتضي صاحب الزماني

11 مرتضي صاحب الزماني

12 Xilinx Coolrunner II (CPLD) Macrocell
مرتضي صاحب الزماني


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