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Day 9: September 18, 2013 MOS Model
ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 9: September 18, 2013 MOS Model Penn ESE370 Fall DeHon
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You are Here Previously: simple models This week and next (4 lectures)
Comfortable with basic functions and circuits This week and next (4 lectures) Detail semiconductor, MOSFET phenomenology Don’t Blink! Rest of terms Implications Penn ESE370 Fall DeHon
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Today MOS Structure Basic Idea Semiconductor Physics
Metals, insulators Silicon lattice Band Gaps Doping Penn ESE370 Fall DeHon
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MOS Metal Oxide Semiconductor Penn ESE370 Fall DeHon
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MOS Metal – gate Oxide – insulator separating gate from channel
drain src channel Metal – gate Oxide – insulator separating gate from channel Ideally: no conduction from gate to channel Semiconductor – between source and drain See why input capacitive? Penn ESE370 Fall DeHon
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Capacitor Charge distribution and field? gate drain src channel
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Idea Semiconductor – can behave as metal or insulator
channel gate src drain Idea Semiconductor – can behave as metal or insulator Voltage on gate creates an electrical field Field pulls (repels) charge from channel Causing semiconductor to switch conduction Hence “Field-Effect” Transistor Penn ESE370 Fall DeHon
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Source/Drain Contacts
Contacts: Conductors metalic Connect to metal wires that connect transistors Penn ESE370 Fall DeHon
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Fabrication Start with Silicon wafer Dope Grow Oxide (SiO2)
Deposit Metal Mask/Etch to define where features go Cartoon fab seq.: t=2min—4min Penn ESE370 Fall DeHon
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Dimensions Channel Length (L) Channel Width (W) Oxide Thickness (Tox)
Process named by minimum length 32nm L=32nm Penn ESE370 Fall DeHon
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Semiconductor Physics
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Conduction Metal – conducts Insulator – does not conduct
Semiconductor – can act as either Penn ESE370 Fall DeHon
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Why metal conduct? (periodic table)
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Conduction Electrons move
Must be able to “remove” electron from atom or molecule Penn ESE370 Fall DeHon
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Atomic States Quantized Energy Levels
Must have enough energy to change level (state) Penn ESE370 Fall DeHon
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Thermal Energy Except at absolute 0 There is always free energy
Causes electrons to hop around ….when enough energy to change states Energy gap between states determines energy required Penn ESE370 Fall DeHon
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Silicon Atom How many valence electrons? Penn ESE370 Fall DeHon
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Silicon 4 valence electrons Inner shells filled
Only outer shells contribute to chemical interactions Penn ESE370 Fall DeHon
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Silicon-Silicon Bonding
Can form covalent bonds with 4 other silicon atoms Penn ESE370 Fall DeHon
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Silicon Lattice Forms into crystal lattice
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Silicon Lattice Cartoon two-dimensional view
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Outer Orbital? What happens to outer shell in Silicon lattice?
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Energy? What does this say about energy to move electron?
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State View Energy Valance Band – all states filled
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State View Conduction Band– all states empty Energy
Valance Band – all states filled Penn ESE370 Fall DeHon
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Band Gap and Conduction
Insulator Metal Ec Ec Ev 8ev OR Ev Ev Ec Ev Ec Semiconductor 1.1ev Penn ESE370 Fall DeHon
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Doping Add impurities to Silicon Lattice
Replace a Si atom at a lattice site with another Penn ESE370 Fall DeHon
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Doping Add impurities to Silicon Lattice E.g. add a Group 15 element
Replace a Si atom at a lattice site with another E.g. add a Group 15 element E.g. P (Phosphorus) How many valence electrons? Penn ESE370 Fall DeHon
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Doping with P Penn ESE370 Fall DeHon
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Doping with P End up with extra electrons Not tightly bound to atom
Donor electrons Not tightly bound to atom Low energy to displace Easy for these electrons to move Penn ESE370 Fall DeHon
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Doped Band Gaps Addition of donor electrons makes more metallic
Easier to conduct Semiconductor Ec 0.045ev ED 1.1ev Ev Penn ESE370 Fall DeHon
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Localized Electron is localized
Won’t go far if no low energy states nearby Increase doping concentration Fraction of P’s to Si’s Decreases energy to conduct Penn ESE370 Fall DeHon
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Electron Conduction Penn ESE370 Fall DeHon
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Electron Conduction Penn ESE370 Fall DeHon
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Capacitor Charge Remember capacitor charge + + + + + + + +
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MOS Field? What does “capacitor” field do to the doped semiconductor channel? Vgs=0 No field + Vcap>0 = Vgs>0 Conducts Penn ESE370 Fall DeHon
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MOS Field Effect Charge on capacitor
Attract or repel charge in channel Change the donors in the channel Modulates conduction Positive Attracts carriers Enables conduction Negative? Repel carriers Disable conduction Penn ESE370 Fall DeHon
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Group 13 What happens if we replace Si atoms with group 13 atom instead? E.g. B (Boron) Valance band electrons? Penn ESE370 Fall DeHon
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Doping with B End up with electron vacancies -- Holes
Acceptor electron sites Easy for electrons to shift into these sites Low energy to displace Easy for the electrons to move Movement of an electron best viewed as movement of hole Penn ESE370 Fall DeHon
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Hole Conduction Penn ESE370 Fall DeHon
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Doped Band Gaps Addition of acceptor sites makes more metallic
Easier to conduct Semiconductor Ec 1.1ev EA 0.045ev Ev Penn ESE370 Fall DeHon
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+ Field Effect? Effect of positive field on Acceptor-doped Silicon?
Vgs=0 No field + Vcap>0 Vgs>0 No conduction Penn ESE370 Fall DeHon
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+ Field Effect? Effect of negative field on Acceptor-doped Silicon?
Vgs=0 No field + Vcap<0 +++++ Vgs<0 Conduction Penn ESE370 Fall DeHon
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MOSFETs Donor doping Acceptor doping Excess electrons
Negative or N-type material NFET Acceptor doping Excess holes Positive or P-type material PFET Penn ESE370 Fall DeHon
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MOSFET Semiconductor can act like metal or insulator
Use field to modulate conduction state of semiconductor Penn ESE370 Fall DeHon
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Admin HW 3 due tomorrow Friday: back here for lecture HW4 is out
MOS Transistor Basics HW4 is out Penn ESE370 Fall DeHon
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