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Amr Amin Preeti Mulage UCLA CKY Group
STT-RAM Test Chip #1 Weekly Status Report Date: Wed Oct Amr Amin Preeti Mulage UCLA CKY Group
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Access Device Sharing Paths for current exist in every row
Sharing is not possible using this architecture We are back to one access device for each cell !
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LVT Access Transistor Max RP and RAP for the three cells for different write currents Low VTH Std VTH
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LVT Access Transistor Max RP and RAP vs. WCELL for IWRITE = 500μA
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Leakage Simulation Leakage vs. Number of Rows in the array
– Current design : 64 rows Cell # 2 Cell # 3 LVT Acc Dev LVT Acc Dev
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MTJ Data Green cells fit in Cell #2 design space
Red cells do not fit for Cell #2 No cells fit for Cells #1 and #3
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MTJ Design Space
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Column MUX Sizing Model
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Column MUX Sizing Simulation
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