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LEC 3.2 LAYOUT D E S I G N R U L E S & DESIGN RULE CHECKER (DRC)

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Presentation on theme: "LEC 3.2 LAYOUT D E S I G N R U L E S & DESIGN RULE CHECKER (DRC)"— Presentation transcript:

1 LEC 3.2 LAYOUT D E S I G N R U L E S & DESIGN RULE CHECKER (DRC)
VLSI System Design LEC 3.2 LAYOUT D E S I G N R U L E S & DESIGN RULE CHECKER (DRC) Engr. Anees ul Husnain ( ) Department of Computer Systems Engineering, College of Engineering & Technology, IUB

2 LAYOUT DESIGN RULES Design Rules: Bridges between technology capability and design considerations

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4 Summary of Terminology
body diffusion (n/p) source drain well tap contact metal track via polysilicon gate length/width gate oxide channel All these structures must obey the dimensions and separation rules dictated by the process fabrication facility

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7 Process design rules Design rules change from fab to fab
Fab examples: IBM, Intel, TI, TSMC, UMC, MOSIS Design rules change according to the process technology

8 Lambda rules Feature Size: minimum distance between source and drain of transistor Feature size = 2λ 90nm feature size λ=45) According to Moore’s Law, how much does the feature size scale by every ~2 years?

9 Design rules and gate layout
Lambda rules are conservative

10 More design rules MOSIS MOSIS Categories: MOS Interconnect Systems
A commercial semi conductor manufacturing company. MOSIS Rules became standards. MOSIS Categories: SCMOS SUBM DEEP

11 MOSIS design rules

12 MOSIS design rules

13 Layout of a 3-input NAND gate

14 DESIGN RULE CHECKER To verify the design parameters set by the design engineering so that it doesn’t exceeds from the allowable limit provided by the fabrication engineer


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