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LEC 3.2 LAYOUT D E S I G N R U L E S & DESIGN RULE CHECKER (DRC)
VLSI System Design LEC 3.2 LAYOUT D E S I G N R U L E S & DESIGN RULE CHECKER (DRC) Engr. Anees ul Husnain ( ) Department of Computer Systems Engineering, College of Engineering & Technology, IUB
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LAYOUT DESIGN RULES Design Rules: Bridges between technology capability and design considerations
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Summary of Terminology
body diffusion (n/p) source drain well tap contact metal track via polysilicon gate length/width gate oxide channel All these structures must obey the dimensions and separation rules dictated by the process fabrication facility
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Process design rules Design rules change from fab to fab
Fab examples: IBM, Intel, TI, TSMC, UMC, MOSIS Design rules change according to the process technology
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Lambda rules Feature Size: minimum distance between source and drain of transistor Feature size = 2λ 90nm feature size λ=45) According to Moore’s Law, how much does the feature size scale by every ~2 years?
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Design rules and gate layout
Lambda rules are conservative
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More design rules MOSIS MOSIS Categories: MOS Interconnect Systems
A commercial semi conductor manufacturing company. MOSIS Rules became standards. MOSIS Categories: SCMOS SUBM DEEP
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MOSIS design rules
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MOSIS design rules
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Layout of a 3-input NAND gate
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DESIGN RULE CHECKER To verify the design parameters set by the design engineering so that it doesn’t exceeds from the allowable limit provided by the fabrication engineer
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