3. New features

10. dispersions function of the current material

30. Start fit

35. Create materials

36. Create materials – n and k fix

37. Dispersion function
Picture: wikipedia

38. amplifying
k < 0
lasing materials
Oscillator with neg. force
Glass, Polymer
Cauchy function
Superposition of oscillators
Semiconductor
non absorbing
k = 0
Forouhi-Bloomer function
Dye
Oscillator
0 < k ≤ 1
absorbing
k > 0
Oscillator in UV +
Metal
k ≥ 1
Drude (Plasmon) Function

39. Cauchy: in general
Picture: wikipedia

40. Cauchy: for n and k
Picture: wikipedia

41. Cauchy:

42. Cauchy:

43. Cauchy:

44. Cauchy:

45. Cauchy:

46. Cauchy:

47. Cauchy: Thickness of a Cauchy layer (substrate = Si(100)

48. amplifying
k < 0
lasing materials
Oscillator with neg. force
Glass, Polymer
Cauchy function
Superposition of oscillators
Semiconductor
non absorbing
k = 0
Forouhi-Bloomer function
Dye
Oscillator
0 < k ≤ 1
absorbing
k > 0
Oscillator in UV +
Metal
k ≥ 1
Drude (Plasmon) Function

49. amplifying
k < 0
lasing materials
Oscillator with neg. force
Glass, Polymer
Cauchy function
Superposition of oscillators
Semiconductor
non absorbing
k = 0
Forouhi-Bloomer function
Dye
Oscillator
0 < k ≤ 1
absorbing
k > 0
Oscillator in UV +
Metal
k ≥ 1
Drude (Plasmon) Function

50. Lorentz – parameter study

51. Lorentz – parameter study

52. Lorentz – parameter study

53. Lorentz – parameter study

54. amplifying
k < 0
lasing materials
Oscillator with neg. force
Glass, Polymer
Cauchy function
Superposition of oscillators
Semiconductor
non absorbing
k = 0
Forouhi-Bloomer function
Dye
Oscillator
0 < k ≤ 1
absorbing
k > 0
Oscillator in UV +
Metal
k ≥ 1
Drude (Plasmon) Function

55. Drude
Picture: wikipedia

56. Drude – parameter study

57. Drude – parameter study

58. Drude – parameter study

59. Dispersion functions: Effective medium approach
Layers out of two components

60. Dispersion functions: Effective medium approach
Incomplete layers – material + void

61. Dispersion functions: Effective medium approach
Surface roughtness

62. Lorentz-Lorentz: eh = 1 The host is chosen as air.
This is the earliest EMA theory, and is based on the Clausius-Mossotti equation. It assumes that the individual constituents are mixed on the atomic scale, and is therefore of limited usefulness in describing real materials, which tend to be mixed on a much larger scale.
Tompkins HG, Irene EA (2005) Handbook of Ellipsometry. William Andrew Publishing. NY

63. Maxwell-Garnett: eh = e1
The host material is the material that has the largest constituent fraction.
This is the most realistic EMA theory when the fraction of inclusions is significantly less than the fraction of host material.
This EMA is very useful for cermats or for certain types of nanocrystals embedded in hosts well below the perculation threshold.
Tompkins HG, Irene EA (2005) Handbook of Ellipsometry. William Andrew Publishing. NY

64. Bruggeman: eh = <e >
the host material is just the EMA dielectric function.
The Bruggeman EMA makes
no assumption concerning the material that has the highest
constituent fraction, and is therefore self-consistent. It is
most useful when no constituent forms a clear majority of the material.
Tompkins HG, Irene EA (2005) Handbook of Ellipsometry. William Andrew Publishing. NY

65. (Al2O3 + SiO2) | Si(100) = (host + guest) | substrate
Maxwell-Garnett, Volume fraction (guest) = 0, layerthickness 65 nm

66. (Al2O3 + SiO2) | Si(100) = (host + guest) | substrate
Maxwell-Garnett, Volume fraction (guest) = 0, layerthickness 65 nm

67. (Al2O3 + SiO2) | Si(100) = (host + guest) | substrate
Maxwell-Garnett, Volume fraction (guest) = 0-1, layerthickness 65 nm

68. (Al2O3 + SiO2) | Si(100) = (host + guest) | substrate
Maxwell-Garnett, Volume fraction (guest) = 0-1, layer thickness 100 nm

69. (Al2O3 + SiO2) | Si(100) = (host + guest) | substrate
Maxwell-Garnett, Volume fraction (guest) = 0-1, layer thickness 10 nm

70. Take home massage:
Interactive and easy to use new thin film modeling software
inspiring confidence by “see what you are doing as you do it”
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