1. EU Compound Semiconductor Materials Committee
Liaison Report
April 2012 v1

2. Leadership Committee Co-chair Arnd Weber; SiCrystal, Germany
Updated April 24, 2012

3. Leadership Change
Roland Bindemann; FCM, Germany stepped down as Committee Co-chair.
Updated April 24, 2012

4. Meeting Information Last meeting April 17, 2012, in Nürnberg, Germany
Next meeting
October 2012, in conjuction with SEMICON Europa, Dresden, Germany
Updated April 24, 2012

5. Committee Structure & Leaders
Compound Semiconductor
Materials Committee
Co-Chair:
Arnd Weber - SiCrystal
Carbon in GaAs TF
L: Hans-Christian Alt - HM
EPD in GaAs TF
L: Ulrich Kretzer - FCM
Silicon Carbide TF
L: Arnd Weber - SiCrystal
GaSb Wafer Specification TF
L: Wolfgang Jantz - Semimap
L: Roy Blunt - IQE
Updated April 24, 2012

6. New SNARFs/TFOF
None
Updated April 24, 2012

7. Ballots issued in cycle 1-2012 and reviewed at April 2012 TC meeting
Doc. #4618, New Standard: Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy APPROVED AS BALLOTED
Doc. #4809, Line Item Revisions to SEMI M , Specifications for Polished Monocrystalline Gallium Antimonide Wafers APPROVED AS BALLOTED
Doc. #4810, New Standard: Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors APPROVED AS BALLOTED
Updated April 24, 2012

8. Global SiC Task Force Leader: Arnd-Dietrich Weber, SiCrystal
Rationale: Create a basic standard for SiC wafer material and a specification for 2”, 3” and 100mm SiC wafers
Drafting document 5370, Specification for 150 mm Silicon Carbide Single-crystalline Substrates
Updated April 24, 2012

9. GaSb Wafer Specification Global Task Force
Leaders: Wolfgang Jantz, Semimap & Roy Blunt, IQE
Rationale: To elaborate a standard specification defining a set of GaSb wafer parameters, including in particular diameter, thickness, orientation(s), laser markings
Doc. 4809, Line Item revison to SEMI M75 Specifications for Polished Monocrystalline Gallium Antimonide Wafers
Ballot was issued in cycle Passed adjudication at April 2012 Committee meeting, to be published in June pending successful A&R procedural review
Updated April 24, 2012

10. Carbon in GaAs Task Force
Leader: Hans-Christian Alt, FHM
Rationale: Performing a round-robin study (FTIR) on selected gallium arsenide samples for the assessment of the quality and the limitations of state-of-the-art measurement equipment and the definition of relevant technical parameters.
Doc. 4618, Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy
Ballot was issued in cycle Passed adjudication at April 2012 Committee meeting, to be published in June pending successful A&R procedural review
Updated April 24, 2012

11. EPD Measurement in GaAs Task Force
Leader: Ulrich Kretzer, Freiberger
Rationale: Development of a standard test method for determination of dislocation etch pit density in monocrystals of III-V-compound semiconductors.
Doc. 4810, Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors
Ballot was issued in cycle Passed adjudication at April 2012 Committee meeting, to be published in June pending successful A&R procedural review
Updated April 24, 2012

12. Yann Guillou (yguillou@semi.org)
Contact Information
Yann Guillou
Updated April 24, 2012