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ECE 874: Physical Electronics
Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University
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Lecture 21, 12 Nov 12 VM Ayres, ECE874, F12
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f(E) = probability = Fermi distribution function
Streetman and Banerjee, Solid State Electronic Devices (Pierret Section 4.2 and Pr. 4.8) VM Ayres, ECE874, F12
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The Fermi (energy) level EF:
50% VM Ayres, ECE874, F12
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At T = 0K: VM Ayres, ECE874, F12
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f(E) at T above 0K: VM Ayres, ECE874, F12
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f(E) at T above 0K: VM Ayres, ECE874, F12
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DOS available states Versus f(E) and EF
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VM Ayres, ECE874, F12
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VM Ayres, ECE874, F12
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Approximation/limits on f(E):
Recall: Two conditions: Temperature T E – EF > 0 E – EF < 0 VM Ayres, ECE874, F12
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Restricting E to values for which there are available states this is:
Two conditions: Temperature T E – EF > 0, where E > EC E – EF < 0, where E < EV E EC Ei EV VM Ayres, ECE874, F12
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Two conditions => Four conditions:
Temperature T Degeneracy E – EF > 0 => EF < EC < E versus EC < E < EF 1. Non-degenerate n-type doping 2. Degenerate n-type doping EF E EC EC EF Ei Ei EV EV VM Ayres, ECE874, F12
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Four conditions: E Temperature T Degeneracy
EF – E > 0 => E < EC < EV versus E < EV < EF 3. Non-degenerate p-type doping 4. Degenerate p-type doping EC EC Ei Ei EF EV EV E EF VM Ayres, ECE874, F12
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Approximation/limits on f(E):
VM Ayres, ECE874, F12
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Approximation/limits on f(E):
VM Ayres, ECE874, F12
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Approximation/limits on f(E):
Use the “hot” limit in ECE 874. VM Ayres, ECE874, F12
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VM Ayres, ECE874, F12
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VM Ayres, ECE874, F12
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VM Ayres, ECE874, F12
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