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UCSB Short-term Testing Plan

Published byBenedict Johnathan Townsend Modified over 6 years ago

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Presentation on theme: "UCSB Short-term Testing Plan"— Presentation transcript:

1 UCSB Short-term Testing Plan
Characterize hybrid (+PA) on arrival Basic functionality and deep test (ARC) Specific bad channel requirements for hybrid (+PA) Re-characterize module on completion of construction Basic functionality, deep test, IV curves (ARC) Different bad channel requirement for module Vienna cold box test fraction of modules (DAQ) Acts as ~24 hour module burn-in Scaled bad channel requirements for change in gain, grounding, etc. Identifies mechanical/bond/electrical weaknesses prior to production of large number of modules Reduces reworking of rod/retrofitting of modules CMS Tracker Week Jan Proposal for Modification of Qualifying Procedure

2 Deep Test Modifications
Make bad channel requirements specific to component type tested (hybrid, hybrid+PA, module) Remove/loosen relative percentage/sigma requirements Tighten/add fixed requirements Motivate requirements on silicon tracker performance CMS Tracker Week Jan Proposal for Modification of Qualifying Procedure

3 Proposal for Modification of Qualifying Procedure
Pedestal/Noise Test Increase minimum noise test Fractional requirements too wide to discern saturated/dead FE preamplifier Replace fractional pedestal requirements with |Pi-Pchip|<Pcut Pcut motivated by decrease in dynamic range of channel Special requirements on chip edges if necessary CMS Tracker Week Jan Proposal for Modification of Qualifying Procedure

4 Proposal for Modification of Qualifying Procedure
Pulse Shape Test Remove current pulse shape requirements Include rise-time/fall-time/peak-time requirement Replace pulse shape with gain measurement Measure pulse heights at 6-13 calibration injection setting between 0-3 MIPs and fit Require gain between Glow and Ghigh Gain uniformity specification Calibration circuit may not be uniform Require c2<c2cut (c2 based on noise measurement) Finds non-linear charge response and gain non-uniformities Should be relatively simple to include in ARC software See following example CMS Tracker Week Jan Proposal for Modification of Qualifying Procedure

5 Hybrid Gain Measurement(1)
0-3 MIPs MIPs CMS Tracker Week Jan Proposal for Modification of Qualifying Procedure

6 Hybrid Gain Measurements(2)
Three channels’ pulse height vs. MIP injected First ‘regular’ Second 1st channel of chip 3 Third 63th channel of chip 3 Gain non-uniform and bad c2 if 0 MIP point included for chip 3 Improved if 0 MIP excluded Mostly likely calibration circuit non-uniformities CMS Tracker Week Jan Proposal for Modification of Qualifying Procedure

7 Proposal for Modification of Qualifying Procedure
Pipeline Test Add pipeline capacitor pedestal/noise requirement Widen relative to channel requirement according to decreased statistics Add pipeline column pedestal/noise requirement Remove bad capacitors/columns from channel pedestal/noise calculation CMS Tracker Week Jan Proposal for Modification of Qualifying Procedure

8 Proposal for Modification of Qualifying Procedure
Ladder Grading Grade ladders by fraction of bad capacitors Bad channel=190 capacitors Bad column=128 capacitors Treat chip edges differently (if necessary) CMS Tracker Week Jan Proposal for Modification of Qualifying Procedure

9 Necessary Infrastructure
DAQ with 10 hybrid channels LV/HV power supplies Reusable for rod burn-in Vienna cold box DI/O PC board 1.5 kW chiller Module carriers CMS Tracker Week Jan Proposal for Modification of Qualifying Procedure

10 Test System Grounding Issues
Module Testing Final PS System Sensor Sensor Hybrid Hybrid HV HV ARC FE +HV +HV HVGND 1.25V 2.5V GROUND LOOPS!!! Interconnect Bus Patch Panel/ LV ARC Controller -5V LV GND +1.25V -5V +2.5V GROUND LOOPS!!! AOH PC Optical Cables DOH Command And Data Cable CMS Tracker Week Jan Proposal for Modification of Qualifying Procedure

11 Proposal for Modification of Qualifying Procedure
Voltage conversion assumes old resistor values in bias return circuit (22KW,100W) With new resistor values (2.2KW, 681W) , need 4 current (~120mA) Voltage at p implant Leakage Current (mA) CMS Tracker Week Jan Proposal for Modification of Qualifying Procedure

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