1. R8 RAD-HARD MOSFETS
The two new R8 radiation hardened (RAD-Hard) power MOSFETs are optimized for space grade point-of-load (POL) voltage regulator, linear amplifier pass element and other general purpose low voltage switching applications.
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Advantages
The new R8 logic level power MOSFETs utilize trench technology to offer extremely low on-resistance (RDS(on)) of 12 milliohms (typical) and total gate charge (Qg) of 18 nC (typical), increasing efficiency performance by up to 6% compared to existing solutions.
The IRHLNM87Y20SCS has a BVDSS rating of 20V and a maximum drain current (ID) rating of 17A.
The new devices are available in IR’s new SMD 0.2 surface-mount style package, achieving a 50% space saving compared to the existing SMD 0.5 package solution. The devices are also offered in a TO-39 package or in die form for microcircuit design solutions.
Designed for mission life of 15 years or more with negligible performance degradation up to the rated total ionizing dose (TID) of 300 Krads (Si), the devices are single event effect (SEE) rated at 81 MeV/(mg/cm2) LET with VGS rating to 12V.
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Features
20V BVDSS
TID rated to 100 Krads without performance degradation to 300 Krads
SEE heavy ion immunity to LET of 81 MeV-cm2/mg
Logic level gate drive similar to R7 with VGS rating to 12V
Low on-resistance (RDS(on))12 milliohms typical
Low total gate charge (Qg), 18 nC typical
Available in SMD 0.2, the industry’s smallest surface-mount power package yielding 50% space savings
August 2013