1. Electronic structure of the SiO2 slab
Obtained through constructing a periodic system in z direction
Obtained by projecting out states associated with Al and n-Si atoms

2. Modification of the Hamiltonian in the SiO2 region
Scale function used for modification of the Hamiltonian
Current density as a function of scale function parameter

3. IV curves for different doping densities
With original Hamitonian
With modified Hamiltonian

4. Number of Channels in the Al and n-Si leads
Al lead

5. Tunneling coefficients T(kx,ky) of MOS
WKB result for a model barrier
LDA result for a real MOS structure