1. Defect-related recombination near an isolated defect in GaAs  Tim Gfroerer,Davidson College, Davidson, NC with Mark Wanlass, National Renewable Energy Lab, CO
Using photoluminescence imaging and measurements of radiative efficiency, we seek to
understand how diffusion to defects affects recombination losses in solar cell materials.
Photoluminescence Images
of the defect
100 μm
Radiative efficiency measurements
on and off of the defect
Defect-related Density of States (DOS) Ev Ec
Energy
Valence Band
Conduction Band
defect
levels
DOS functions yield
these theoretical fits