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Molecular Beam Epitaxy (MBE) C Tom Foxon

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Presentation on theme: "Molecular Beam Epitaxy (MBE) C Tom Foxon"— Presentation transcript:

1 Molecular Beam Epitaxy (MBE) C Tom Foxon
School of Physics and Astronomy, University of Nottingham Nottingham 2015

2 What is MBE? Growth of epitaxial films on a hot substrate from molecular beams under ultra-high vacuum conditions. III-V Semiconductors ( also used for gp IV, II-VIs, metals, oxides etc) Typical growth rates: one monolayer/sec (equivalent to a pressure of 10-6Torr) Nottingham 2015

3 MBE systems old and new Nottingham 2015

4 MBE schematic Nottingham 2015

5 MBE cells schematic Nottingham 2015
Typical effusion cell for Al, Ga etc. Nottingham 2015

6 Growth of GaAs from Ga & As2
C T Foxon and B A Joyce, Surface Science 64 (1977) 293 Nottingham 2015

7 Growth dynamics - RHEED
Nottingham 2015

8 Growth dynamics - RHEED
Nottingham 2015

9 Scanning tunnelling microscopy
Atomic resolution using a tip close to the surface Nottingham 2015

10 Large area STM images Initial surface before growth after 3
Large area STM images Initial surface before growth after 3.5 MLs deposited Sudijono et al, J Crystal Growth 280 (1993) 247 Nottingham 2015

11 Superlattices All SL laser QW 8 MLs AlAs 8MLs GaAs 1ML= 0.28nm
Nottingham 2015

12 MBE at Nottingham (1991 with John Orton)
AlGaInN or III-Nitrides Spintronics - GaMnAs, CuMnAs etc. Amorphous III-Arsenide Nitrides Free standing AlGaN Photocathodes – with Photek Graphene-Boron Nitride Nottingham 2015

13 Nottingham 2015

14 Active species from the plasma
OED (745nm) 869nm Source A Nottingham 2015

15 Morphology for growth on sapphire
Nottingham 2015

16 Growth on GaN substrates
Nottingham 2015

17 CuMnAs after annealing
Nottingham 2015

18 Low temperature MBE growth of GaNAs
RMS roughness is ~0.2nm Nottingham 2015

19 Measurements at Berkeley – Yu et al
Nottingham 2015

20 Free standing cubic AlGaN
Nottingham 2015

21 The worlds hotest MBE Nottingham 2015

22 Epitaxial graphene by heating SiC
Nottingham 2015

23 Graphene grown from carbon on sapphire
Nottingham 2015

24 Graphene grown from carbon on sapphire
Nottingham 2015

25 Summary MBE gives excellent control of composition and thickness, with both in-situ and ex-situ characterisation In-situ monitoring with mass spectrometry for growth kinetics, with RHEED and STM for growth dynamics. Since coming to Nottingham, we have extended the materials grown by MBE to include, nitrides, spintronics amorphous nitrides, bulk AlGaN and photocathodes (at Photek). The latest venture is graphene-boron/nitride Nottingham 2015


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