1. Survey on Stochastic Leakage Modeling Wenyao Xu Fengbo Ren
Final Presentation
Survey on Stochastic Leakage Modeling
Wenyao Xu
Fengbo Ren

2. Outline
Process Variation
Leakage Modeling
Paper Survey

3. Outline
Process Variation
Leakage Modeling
Paper Survey

4. Source of Process Variation
Gate oxide thickness (tox)

5. Source of Process Variation
Doping variation

6. Source of Process Variation
Channel length variation

7. Source of Process Variation
Gate oxide thickness (tox)
Doping variation
Channel length variation
Vth Variation
Spatial correlation:
closely located devices have higher probability to take same values of process parameters
Within a Die
Lower correlation of process parameter
Higher correlation of process parameter
(Correlation  1/Distance)
2cm

8. Outline
Process Variation
Leakage Modeling
Paper Survey

9. Type of Leakage Subthreshold leakage Gate oxide leakage
Variation
Subthreshold leakage
Gate oxide leakage
Junction tunneling leakage
Variation
Gate
Source n+
Bulk
Drain
Subthreshold Leakage Isub
Gate Leakage Igate
Junction tunneling leakage

10. Other Stochastic Variables for Leakage Modeling
Different Devices
BULK-FET, FinFET, Tri-gate, GP-SOI FET, DG-SOI FET, DG-VFET
Circuit Topology
Stack Effect
Input vector

11. Stochastic Leakage Modeling
Process Variation
Other Viration
Doping variation
Vth Variation
Within Die
With Spatial correlation
Devices
Circuit Topology
Channel length variation
W/O Spatial correlation
Input Vector
Die to Die
Gate Thickness Variation

12. Modeling Classification
Subthreshold Leakage
Log
Leakage Type
Gate Tunneling Leakage
Spatial
Correlation
Junction Tunneling Leakage
Doping
Non-Log
Intra Die
w/o Spatial
Correlation
Gate Oxide Thickness
Vth Variation
Variation
Type
Channel length
Inter Die
Input Vector
Circuit Topology
Device

13. Rao etc. DAC04 Subthreshold Leakage Log Leakage Type
Gate Tunneling Leakage
Spatial
Correlation
Junction Tunneling Leakage
Doping
Non-Log
Intra Die
w/o Spatial
Correlation
Gate Oxide Thickness
Vth Variation
Inter Die
Variation
Type
Channel length
Input Vector
Circuit Topology
Device

14. Amit etc. ICCAD05 Subthreshold Leakage Log Leakage Type
Gate Tunneling Leakage
Spatial
Correlation
Junction Tunneling Leakage
Doping
Non-Log
Intra Die
w/o Spatial
Correlation
Gate Oxide Thickness
Vth Variation
Inter Die
Variation
Type
Channel length
Input Vector
Circuit Topology
Device

15. Chang etc. DAC05 Subthreshold Leakage Log Leakage Type
Gate Tunneling Leakage
Spatial
Correlation
Junction Tunneling Leakage
Doping
Non-Log
Intra Die
w/o Spatial
Correlation
Gate Oxide Thickness
Vth Variation
Inter Die
Variation
Type
Channel length
Input Vector
Circuit Topology
Device

16. Hari etc. DAC06 Subthreshold Leakage Log Leakage Type
Gate Tunneling Leakage
Spatial
Correlation
Junction Tunneling Leakage
Doping
Non-Log
Intra Die
w/o Spatial
Correlation
Gate Oxide Thickness
Vth Variation
Inter Die
Variation
Type
Channel length
Input Vector
Circuit Topology
Device

17. Xin etc. DAC06 Subthreshold Leakage Log Leakage Type
Gate Tunneling Leakage
Spatial
Correlation
Junction Tunneling Leakage
Doping
Non-Log
Intra Die
w/o Spatial
Correlation
Gate Oxide Thickness
Vth Variation
Inter Die
Variation
Type
Channel length
Input Vector
Circuit Topology
Device

18. Li etc. DAC07 Subthreshold Leakage Log Leakage Type
Gate Tunneling Leakage
Spatial
Correlation
Junction Tunneling Leakage
Doping
Non-Log
Intra Die
w/o Spatial
Correlation
Gate Oxide Thickness
Vth Variation
Inter Die
Variation
Type
Channel length
Input Vector
Circuit Topology
Device

19. Question

20. Heloue etc. DAC07 Subthreshold Leakage Log Leakage Type
Gate Tunneling Leakage
Spatial
Correlation
Junction Tunneling Leakage
Doping
Non-Log
Intra Die
w/o Spatial
Correlation
Gate Oxide Thickness
Vth Variation
Inter Die
Variation
Type
Channel length
Input Vector
Circuit Topology
Device