1. Statistical Model for the Low-Frequency Noise of MOSFETs under Cyclo-stationary Excitation
Inversion layer
Trap
Gate Oxide
Interaction with the inversion layer
Drain Current ID

2. Decrease in Average Noise Power
The reason for the LF-noise decrease is twofold:
i) The traps that contribute most to noise are the ones close
to the bandgap center, where trap density is smaller;
ii) the decreased contribution of traps close to the
bandgap edge, where trap density is higher.

3. Increase in Variability (Standard Dev.)