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Volume 2, Issue 1, Pages 1-4 (January 2018)

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1 Volume 2, Issue 1, Pages 1-4 (January 2018)
Power and Technology Scaling into the 5 nm Node with Stacked Nanosheets  Terence B. Hook  Joule  Volume 2, Issue 1, Pages 1-4 (January 2018) DOI: /j.joule Copyright © 2017 Elsevier Inc. Terms and Conditions

2 Figure 1 TEM Cross-Sections of a FinFET and a Nanosheet
In both cases the orientation is such that current flows into the page. (A) The width of FinFET body controls the electrostatics, and the spacing between the fins dominates the parasitic gate-drain capacitance. (B) In the nanosheet, the thickness of the sheet controls the electrostatics, and the sheet-sheet spacing, also vertically oriented and created by epitaxy, dominates the parasitic gate-drain capacitance. Joule 2018 2, 1-4DOI: ( /j.joule ) Copyright © 2017 Elsevier Inc. Terms and Conditions

3 Figure 2 Calculated Performance (Ring Oscillator Frequency) as a Function of Dynamic Power per Stage for the Current (10 nm) Generation of Technology and the New (Nanosheet) Technology Voltage is the parameter varied. The new technology can be operated at much lower power per circuit at the same frequency or increase the frequency of operation at a given power. Joule 2018 2, 1-4DOI: ( /j.joule ) Copyright © 2017 Elsevier Inc. Terms and Conditions

4 Joule 2018 2, 1-4DOI: ( /j.joule ) Copyright © 2017 Elsevier Inc. Terms and Conditions


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