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Chapter Noise
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Fundamental Noise Characteristics
Thermal Noise Shot Noise in a pn Junction Shot Noise in Bipolar Transistors
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Thermal Noise We cannot use the average value of the voltage as a figure-of-merit, because the time-averaged value is always zero. Instead, we used its mean square value The ratio of this mean square value with respect to , as approaches zero, gives the “power spectral density” (PSD) of the voltage noise, denoted by Sv(f), where Sv(f) has units of V2/Hz.
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Shot Noise in a pn Junction
“Shot noise” refers to the fluctuations associated with the dc current flow across a potential barrier, which naturally occurs, for instance, under forward bias in a pn junction. The mean square of the current fluctuations is proportional to the average diode current Idc
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Shot Noise in Bipolar Transistors
For the same IC, a SiGe HBT has a lower IB than a Si BJT, and hence a lower than a Si BJT, because of the inherently higher . Furthermore, a SiGe HBT can be operated at a lower IC than a Si BJT for the same RF gain, because of the higher fT and fmax, further reducing
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Noiseless Tow-port I1 I2 Two-port Network V1 V2
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I1 I2 - + + - NoiselessNetwork (Z) Vn1 Vn2 V1 V2
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I1 I2 NoiselessNetwork (Y) V1 V2 In1 In2 (a)
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I2 I1 - + Vn1 (Y) V1 V2 In1 (b)
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From equation (a) (b): (1) (2) (3) (4) From (4)-(2): From (3)-(1):
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I1 I2 B C BJT V1 V2 ib ic E E
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Now we can solve for the spectral densities of
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I2 I1 B - + C 4kTrb BJT V1 2qIB 2qIC E E
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Noise Figure=(Si/Ni)/(So/No)
The noise figure of a transistor circuit is determined by the source termination admittance , and the noise parameters of the circuit, including the minimum noise figure NFmin, the optimum source Ys,opt, and the noise resistance Rn.
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Cbe consists of the EB depletion capacitance Cte and the EB diffusion capacitance gmﺡ ( ), with begin the transit time, and Ci is related to fT through
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Noise Resistance Optimum Source Admittance
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Minimum Noise Figure NFmin decreases with increasing β, decreasing Ci (transit time), and decreasing rb.
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Associated Gain GA increases with GA decreases with Increase IC
Decrease Ci Decrease rb Decrease Ccb GA decreases with Increase β Increase frequency
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