1. TopGaN Ltd. company profile

2. Ownership structure
51% EuroCity II (company owned by Mr A. Kasprowiak)
34% Institute of High Pressure Physics
14% technology founders
1% others

3. TopGaN patents
TopGaN has probably the most independent nitride patent portfolio compared to other nitride companies.
Main patents:
Epitaxy on bulk GaN substrates grown at high pressure
Epitaxy of AlGaInN layers using PA MBE
Surface preparation of GaN substrates
Plasmonic substrates (patent pending)
Non absorbing mirrors (patent pending)
P-type co-doping of GaN (patent pending)

4. Facility GaN substrates 300m2 clean room
Epitaxy growth: 2MBE + 4 MOVPE
Laser processing 600m2 cleam room
Testing + characterisation lab

5. GaN substrates grown by a combined method of HVPE (hydride vapour phase epitaxy) and high pressure (10 kbar) +
TopGaN can produce the highest quality GaN substrates for LD manufacture.
TopGaN GaN substrates allow the possibility of laser array manufacture – a USP

6. GaN substrates grown by a combined method of HVPE (hydride vapour phase epitaxy) and high pressure (10 kbar)
1 inch GaN substrates with ultra low dislocation density available today.
2 inch GaN substrates demonstrated (this is state-of-the-art).
Production ramp of 2 inch GaN substrates to 10 wafers per month within 2 years.
Potential further expansion is being considered
Plan to introduce ISO9000 standard for GaN manufacturing

7. Epitaxy: MOVPE + MBE GaN epitaxy growth
State-of-the-art nitride epitaxy growth facility.
Innovative nitride R&D.
Producing world-class device characteristics.