1. Details and Assumptions for Technology Requirements
ITRS 2003 Factory Integration Chapter Electrostatic Discharge - Backup Section
Details and Assumptions for Technology Requirements
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2. ITRS Factory Integration TWG
Outline
Problems Caused By Static Charge
attraction of contamination
electrostatic discharge (ESD) damage to devices and photomasks
equipment malfunction due to ESD-generated electromagnetic interference (EMI)
SEMI E129 – Guide to Assess and Control Electrostatic Charge in a Semiconductor Manufacturing Facility
Conclusions
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3. Static Charge Problems: Contamination and ESD
Yield
Throughput
Reticles
Equipment
Contamination
Process Interruptions
Wafers
Integrated
Circuits
ESD Damage
Static Charge +
--- --
FPD Screens
Pellicles
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4. Forces on a Contaminant Particle Near Charged Surfaces
for 1000 V surfaces, the
greatest force is electrostatic!
gravitational
aerodynamic
Electrostatic
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5. Electrostatic Attraction 200mm vs. 300mm
positive
neutral
negative
0.000
0.005
0.010
0.015
0.020
0.025
0.030
Rate of Contaminating (/cm2-hr)
300 mm
200 mm
Polarity Dependence of ESA at One Fab
Particle deposition 3-6 times higher for wafers at 10kV
Particle deposition 30-60% greater at 300mm than 200mm
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6. Device ESD Failure Mechanisms
Human Body Model
human contact with a sensitive device
Machine Model
charged conductor contacting a sensitive device
Charged Device Model
device contacts ground when in an electric field
device package is charged and device contacts ground
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7. Destruction of Silicon Due to ESD
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8. ESD Effects on Semiconductor Manufacturing
Photomask Damage Due to ESD
1.5 m
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9. ESD Events Create Electromagnetic Interference (EMI)
ESD Radiates Radio Waves
and induces signals in
microprocessors and metrology tools
Scrambled Program Instructions
Scrambled Data
Confusing Error Messages
Microprocessor Lockup
Calibration Failures
Apparent Software Bugs
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10. ITRS Factory Integration TWG
EMI Events in Photo
Ratio - 30:1
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11. Semiconductor Equipment and Materials International (SEMI)
SEMI E129 :Guide to Assess and Control Electrostatic Charge in a Semiconductor Manufacturing Facility
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12. SEMI E129 Guide – Recommended Electrostatic Limits
Year
Node
Electrostatic Discharge, nC
Electrostatic Field,
V/cm V/inch
2000
180 nm
2002
130 nm
2003
100 nm
2.0
1.5
375
2004
90 nm
1.0
2007
65 nm
0.5
2009
50 nm
0.25
2012
32 nm
0.125
2015
25 nm
0.1
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13. ITRS Technical Requirements - Electrostatics
2002
2003
Note: 2003 changes shown in bold
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14. ITRS Factory Integration TWG
Conclusions
Major elements of technology change are smaller device geometry, lower defect densities, larger wafers, faster equipment operating speeds, and more dependence on automation. All of these areas are adversely affected by the presence of static charge in the semiconductor factory.
Static charge needs to be controlled before it becomes a barrier to new technology introduction, slows the ramping of new factories, or a costly learning experience.
SEMI Standards is in the process of releasing E129 which contains electrostatic limits and measurement methods for the entire semiconductor facility.
The technology requirements in the ITRS will solve the static problem in factory construction and in equipment design - before static charge can impact production.
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