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Published byJoella Whitehead Modified over 6 years ago
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(definition)
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HBT Heterojunction Bipolar Transistor
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Gain as a function of current.
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Effect of recombination currents.
High injection effects also shown. Note: recombination does not contribute to Ic!
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General behavior of β (hFE) as a function of collector current (from Sze).
Low currents: Recombination currents dominate (just as in diode). High currents: High injection effects (increases effective base doping) and series resistance effects increase.
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This looks good, but: Only part of the emitter is active, but the whole emitter contributes capacitance. High current density reduces current gain.
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