1. EE130/230A Discussion 8
Peng Zheng

2. MOS Operating Regions (n-type Si)
Decrease VG toward more negative values
 the gate electron energy increases relative to that in the Si
decrease VG
decrease VG
Accumulation
VG > VFB
Electrons accumulated at Si surface
Depletion
VG < VFB
Electrons depleted from Si surface
Inversion
VG < VT
Surface inverted to p-type
EE130/230A Fall 2013
Lecture 15, Slide 2
R. F. Pierret, Semiconductor Device Fundamentals, Fig. 16.5

3. Sample Problem- MOS Capacitor Energy Band Diagrams

4. Sample Problem- MOS Capacitor Energy Band Diagrams

5. Sample Problem- MOS Capacitor Energy Band Diagrams

6. Sample Problem- MOS Capacitor Energy Band Diagrams

7. Questions?
HW#8
Quiz#3
Good Luck!