1. 19, Yangjae-daero 11gil, Seocho-gu, Seoul 137-130, Korea
Month Year
doc.: IEEE yy/xxxxr0
November 2015
HE-STF Sequences
Date:
Authors:
Name
Affiliation
Address
Phone
Eunsung Park
LG Electronics
19, Yangjae-daero 11gil, Seocho-gu, Seoul , Korea
Jinsoo Choi
Jinyoung Chun
Dongguk Lim
Jinmin Kim
Kiseon Ryu
Jeongki Kim
Suhwook Kim
JayH Park
HanGyu Cho
Eunsung Park, LG Electronics
John Doe, Some Company

2. 2111 NE 25th Ave, Hillsboro OR 97124, USA
November 2015
Authors (continued)
Name
Affiliation
Address
Phone
Ron Porat
Broadcom
Sriram Venkateswaran
Matthew Fischer
Leo Montreuil
Andrew Blanksby
Vinko Erceg
Robert Stacey
Intel
2111 NE 25th Ave, Hillsboro OR 97124, USA     
Shahrnaz Azizi
Po-Kai Huang
Qinghua Li
Xiaogang Chen
Chitto Ghosh
Laurent Cariou
Yaron Alpert
Assaf Gurevitz
Ilan Sutskover
Eunsung Park, LG Electronics

3. Authors (continued) November 2015 Hongyuan Zhang Marvell
Name
Affiliation
Address
Phone
Hongyuan Zhang
Marvell
5488 Marvell Lane, Santa Clara, CA, 95054
Yakun Sun
Lei Wang
Liwen Chu
Jinjing Jiang
Yan Zhang
Rui Cao
Sudhir Srinivasa
Bo Yu
Saga Tamhane
Mao Yu
Xiayu Zheng
Christian Berger
Niranjan Grandhe
Hui-Ling Lou
Eunsung Park, LG Electronics

4. Authors (continued) November 2015 Alice Chen Albert Van Zelst
Name
Affiliation
Address
Phone
Alice Chen
Qualcomm
5775 Morehouse Dr. San Diego, CA, USA
Albert Van Zelst
Straatweg 66-S Breukelen, 3621 BR Netherlands
Alfred Asterjadhi
Arjun Bharadwaj
Bin Tian
Carlos Aldana
1700 Technology Drive San Jose, CA 95110, USA
George Cherian
Gwendolyn Barriac
Hemanth Sampath
Lin Yang
Menzo Wentink
Naveen Kakani
2100 Lakeside Boulevard Suite 475, Richardson TX 75082, USA
Raja Banerjea
1060 Rincon Circle San Jose CA 95131, USA
Richard Van Nee
Eunsung Park, LG Electronics

5. Authors (continued) November 2015 Rolf De Vegt Sameer Vermani Qualcomm
Name
Affiliation
Address
Phone
Rolf De Vegt
Qualcomm
1700 Technology Drive San Jose, CA 95110, USA
Sameer Vermani
5775 Morehouse Dr. San Diego, CA, USA
Simone Merlin
Tao Tian
Tevfik Yucek  
VK Jones
Youhan Kim
Eunsung Park, LG Electronics

6. Authors (continued) November 2015 James Yee Mediatek
Name
Affiliation
Address
Phone
James Yee
Mediatek
No. 1 Dusing 1st Road, Hsinchu, Taiwan  
Alan Jauh
Chingwa Hu
Frank Hsu
Thomas Pare
USA
2860 Junction Ave, San Jose, CA 95134, USA
ChaoChun Wang
James Wang
Jianhan Liu
Tianyu Wu
Zhou Lan
Russell Huang
Joonsuk Kim
Apple
Aon Mujtaba  
Guoqing Li
Eric Wong
Chris Hartman
Eunsung Park, LG Electronics

7. Authors (continued) November 2015 Peter Loc Le Liu Jun Luo Yi Luo
Name
Affiliation
Address
Phone
Peter Loc
Huawei
Le Liu
F1-17, Huawei Base, Bantian, Shenzhen
Jun Luo
5B-N8, No.2222 Xinjinqiao Road, Pudong, Shanghai
Yi Luo
Yingpei Lin
Jiyong Pang
Zhigang Rong
10180 Telesis Court, Suite 365, San Diego, CA  NA
Rob Sun
303 Terry Fox, Suite 400 Kanata, Ottawa, Canada
David X. Yang
Yunsong Yang
Junghoon Suh
Jiayin Zhang
Edward Au
Teyan Chen
Yunbo Li
Eunsung Park, LG Electronics

8. Authors (continued) November 2015 Fei Tong Hyunjeong Kang Samsung
Name
Affiliation
Address
Phone
Fei Tong
Samsung
Innovation Park, Cambridge CB4 0DS (U.K.)
Hyunjeong Kang
Maetan 3-dong; Yongtong-Gu Suwon; South Korea
Kaushik Josiam
1301, E. Lookout Dr, Richardson TX 75070
(972)
Mark Rison
Rakesh Taori
(972)
Sanghyun Chang
Yasushi Takatori
NTT
1-1 Hikari-no-oka, Yokosuka, Kanagawa Japan
Yasuhiko Inoue
Shoko Shinohara
Yusuke Asai
Koichi Ishihara
Junichi Iwatani
Akira Yamada
NTT DOCOMO
3-6, Hikarinooka, Yokosuka-shi, Kanagawa, , Japan
Fujio Watanabe
3240 Hillview Ave, Palo Alto, CA 94304
Haralabos Papadopoulos
Eunsung Park, LG Electronics

9. #9 Wuxingduan, Xifeng Rd., Xi'an, China
November 2015
Authors (continued)
Name
Affiliation
Address
Phone
Yuichi Morioka
Sony Corporation
1-7-1 Konan  Minato-ku, Tokyo , Japan 
Masahito Mori
Yusuke Tanaka
Kazuyuki Sakoda
William Carney
Thomas Derham
Orange
Bo Sun
ZTE
#9 Wuxingduan, Xifeng Rd., Xi'an, China
Kaiying Lv
Yonggang Fang
Ke Yao
Weimin Xing
Brian Hart
Cisco Systems
170 W Tasman Dr, San Jose, CA 95134
Pooya Monajemi
Eunsung Park, LG Electronics

10. November 2015
Overview
Based on agreed 1x and 2x FFT size for HE-STF [1], this contribution discusses how to design HE-STF sequence for 11ax
In this contribution, we build up HE-STF sequences by combining some extra values for additional usable tones and M sequence which can yield low PAPR
All proposed sequences consist of binary values
Also, the proposed HE-STF sequences have a nested structure, and thus those maintain similarities among 20, 40, 80MHz
Extra values and coefficients of each M sequence are optimized in terms of the PAPR
While we only consider the PAPR of the entire band for 1x HE-STF (i.e. 0.8us time period), we take into account the PAPRs of all resource units of OFDMA for 2x HE-STF (i.e. 1.6us time period)
Note that PAPR is always calculated by applying 4x FFT sample rate in this contribution
Eunsung Park, LG Electronics

11. HE-STF Sequence for 0.8us Periodicity (1/3)
November 2015
HE-STF Sequence for 0.8us Periodicity (1/3)
HE-STF sequence building procedure for 0.8us Periodicity
M sequence is defined in the next page
Candidates of a and c :{1, -1}
20MHz
{M}
20MHz
{c1M}
40MHz
{M, 0, M}
40MHz
{c2M, 0, c3M}
80MHz
{M, 0, M, 0, M, 0, M}
80MHz
{c4M, a1, c5M, 0, c6M, a2, c7M}
Extra
value
Extra
value
1. Repeat the structure
2. Put extra values and coefficients and optimize those values
Eunsung Park, LG Electronics

12. HE-STF Sequence for 0.8us Periodicity (2/3)
November 2015
HE-STF Sequence for 0.8us Periodicity (2/3)
The coefficients and extra values have been selected in such a way that the PAPR of the entire band is minimized
M sequence is defined as follows
M = { }
20MHz
HES-112,112(-112:16:112) = M *(1+j)*sqrt(1/2)
HES-112,112(0) = 0
40MHz
HES-240,240(-240:16:240) = {M, 0, -M} *(1+j)*sqrt(1/2)
80MHz
HES-496,496(-496:16:496) = {M, 1, -M, 0, -M, 1, -M} *(1+j)*sqrt(1/2)
Eunsung Park, LG Electronics

13. HE-STF Sequence for 0.8us Periodicity (3/3)
November 2015
HE-STF Sequence for 0.8us Periodicity (3/3)
PAPR [dB]
In 20MHz and 40MHz, the proposed sequences have lower PAPR than those of 11ac
Also, even in 80MHz, the PAPR of the proposed sequence is comparable
PAPR
20MHz
40MHz
80MHz
11ac
2.24
5.25
4.35
Proposed
1.89
4.40
4.53
Eunsung Park, LG Electronics

14. HE-STF Sequence for 1.6us Periodicity (1/7)
November 2015
HE-STF Sequence for 1.6us Periodicity (1/7)
HE-STF sequence building procedure for 1.6us Periodicity
20MHz
{M, 0, M}
40MHz
{M, 0, M, 0, M, 0, M}
80MHz
{M, 0, M, 0, M, 0, M, 0, M, 0, M, 0, M, 0, M}
1. Repeat the structure
20MHz
{c1M, 0, c2M}
{c3M, a1, c4M, 0, c5M, a2, c6M}
40MHz
80MHz
{c7M, a3, c8M, a4, c9M, a5, c10M, 0, c11M, a6, c12M, a7, c13M, a8, c14M}
2. Put extra values and coefficients and optimize those values
Eunsung Park, LG Electronics

15. HE-STF Sequence for 1.6us Periodicity (2/7)
November 2015
HE-STF Sequence for 1.6us Periodicity (2/7)
The coefficients and extra values have been selected in such a way that based on the agreed OFDMA tone plan [1], the worst PAPR among all PAPRs of resource units is minimized
In order to check the PAPRs of all resource units, we have considered the UL OFDMA where each user occupies only one resource unit
20MHz
HES-120,120(-120:8:120) = {M, 0 , -M} *(1+j)*sqrt(1/2)
40MHz
HES-248,248(-248:8:248) = {M, -1, -M, 0, M, -1, M} *(1+j)*sqrt(1/2)
HES-248,248(±248) = 0
80MHz
HES-504,504 (-504:8:504) = {M, -1, M, -1, -M, -1, M, 0, -M, 1, M, 1, -M, 1, -M} *(1+j)*sqrt(1/2)
HES-504,504(±504) = 0
Eunsung Park, LG Electronics

16. HE-STF Sequence for 1.6us Periodicity (3/7)
November 2015
HE-STF Sequence for 1.6us Periodicity (3/7)
PAPR [dB]
Assuming UL OFDMA, we have checked PAPR in all resource units with agreed tone plans
20MHz
2.48
2.22
4.77
1.93
4.79
4.26
4.37
4.40 7 DC 26 52 DC
102+4 pilots 1 13
5 Edge
6 Edge
Eunsung Park, LG Electronics

17. HE-STF Sequence for 1.6us Periodicity (4/7)
November 2015
HE-STF Sequence for 1.6us Periodicity (4/7)
PAPR [dB] (cont.)
40MHz
12 Edge
11 Edge 5 DC
D C
242 26
102+4 52 1 2
2.22
2.48
4.77
2.90
4.52
4.26
5.21
5.39
4.39
5.46
5.48
5.22
Eunsung Park, LG Electronics

18. HE-STF Sequence for 1.6us Periodicity (5/7)
November 2015
HE-STF Sequence for 1.6us Periodicity (5/7)
PAPR [dB] (cont.)
80MHz
12 Edge 13
11 Edge 7 DC
996 usable tones +5 DC
242 26 52
102+4 2 1
Eunsung Park, LG Electronics

19. HE-STF Sequence for 1.6us Periodicity (6/7)
November 2015
HE-STF Sequence for 1.6us Periodicity (6/7)
PAPR [dB] (cont.)
80MHz (cont.)
PAPRs of left hand side 26
2.22
2.48
4.77
2.90
4.52
4.26
5.21
4.80
3.85
5.39
4.39
5.40
5.50
5.61
4.79 52
106
242
484
Eunsung Park, LG Electronics

20. HE-STF Sequence for 1.6us Periodicity (7/7)
November 2015
HE-STF Sequence for 1.6us Periodicity (7/7)
PAPR [dB] (cont.)
80MHz (cont.)
PAPRs of right hand side
PAPR of center 26 tone RU is 1.94
PAPR of entire band is 5.77 26
2.22
4.77
2.48
4.26
4.80
3.85
5.21
4.52
2.90
4.39
5.40
5.39
5.61
5.50
4.79 52
106
242
484
Eunsung Park, LG Electronics

21. Summary The proposed sequences use binary signaling as in 11ac
November 2015
Summary
We have proposed HE-STF sequences for 0.8us and 1.6us periodicity
For building up HE-STF sequences, we have simply applied the nested structure and put some extra values and coefficients
HE-STF sequences for 0.8us periodicity have been optimized in terms of the PAPR of the entire band
Based on the OFDMA tone plan, HE-STF sequences for 1.6us periodicity which minimize the worst PAPR have been determined
The proposed sequences use binary signaling as in 11ac
In terms of PAPR, the proposed sequences are not bottle-necks compared to the data part as shown in appendix
Eunsung Park, LG Electronics

22. November 2015
Straw poll
Do you agree to add the following HE-STF sequences for 0.8us and 1.6us periodicity to the 11ax SFD:
M = { }
1x HE-STF sequences
20MHz
HES-112,112(-112:16:112) = M *(1+j)*sqrt(1/2)
HES-112,112(0) = 0
40MHz
HES-240,240(-240:16:240) = {M, 0, -M} *(1+j)*sqrt(1/2)
80MHz
HES-496,496(-496:16:496) = {M, 1, -M, 0, -M, 1, -M} *(1+j)*sqrt(1/2)
2x HE-STF sequences
HES-120,120(-120:8:120) = {M, 0 , -M} *(1+j)*sqrt(1/2)
HES-248,248(-248:8:248) = {M, -1, -M, 0, M, -1, M} *(1+j)*sqrt(1/2)
HES-248,248(±248) = 0
HES-504,504 (-504:8:504) = {M, -1, M, -1, -M, -1, M, 0, -M, 1, M, 1, -M, 1, -M} *(1+j)*sqrt(1/2)
HES-504,504(±504) = 0
Eunsung Park, LG Electronics

23. References [1] 11-15-0132-09-00ax-spec-framework November 2015
Eunsung Park, LG Electronics

24. November 2015
Appendix
Eunsung Park, LG Electronics

25. PAPR comparison between Data and 2x HE-STF
November 2015
PAPR comparison between Data and 2x HE-STF
The CDF for the data and 2x HE-STF PAPR in UL OFDMA with the tone plan described in slide 8-10 will be shown in the next three slides
We obtain the PAPR assuming each user occupies only one resource unit
As shown in slide 8-10, possible resource units (max tone units are just for checking on entire band) are
Nine 26, four 52, two 106 and one 242 tone units in 20MHz
Eighteen 26, eight 52, four 106, two 242 and one 484 tone units in 40MHz
Thirty-seven 26, sixteen 52, eight 106, four 242, two 484 and one 994 tone units in 80MHz
Then, we aggregate PAPR results of all possible resource units for each bandwidth and plot the CDF
Eunsung Park, LG Electronics

26. November 2015
PAPR Comparison - 20MHz
Eunsung Park, LG Electronics

27. November 2015
PAPR Comparison - 40MHz
Eunsung Park, LG Electronics

28. November 2015
PAPR Comparison - 80MHz
Eunsung Park, LG Electronics