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Standard 16-Mask CMOS Process
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Overall Structure of CMOS
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Two Level Metal Interconnect CMOS
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Step-I :”Active Area” Processes
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Active Area Delineation
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LOCOS and P-well creation
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Shallow Trench Isolation (STI)
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Final N-Well and P-Well Creation
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Threshold Adjust Implants
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Polysilicon Gate Realization
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Gate Delineation
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S/D Extensions for SCE reduction
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Sidewall Spacer creation
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Deep Source & Drain Formation
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Source & Drain Contact windows
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Titanium Silicide contact to Source and Drain And Titanium Nitride Barrier creation
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Local Interconnect to Multilevel Metal
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CMP Planerization of Deposited Oxide and Via creation for W-stub
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Deposition of TiN Barrier and Tungsten for Stub Creation
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First Level Global Interconnect Metallization
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Second Level Metallization and ahead
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