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Attempts to deposit Nb3Sn by sputtering

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Presentation on theme: "Attempts to deposit Nb3Sn by sputtering"— Presentation transcript:

1 Attempts to deposit Nb3Sn by sputtering
and diffusing multilayers of Nb and Sn S. Deambrosis, G. Keppel, V. Palmieri, N. Patron, R.G. Sharma Thin films and new ideas for pushing the limits of RF superconductivity, Legnaro 9-12 October 2006

2 Experimental setup: sputtering
Section view of experimental device Experimental design sputtering system Balanced Magnetron sources Target-Substrate distance 60 mm 2 inches target diameter Thin films and new ideas for pushing the limits of RF superconductivity, Legnaro 9-12 October 2006

3 Thickness Nb = 4.5 Thickness Sn
Thin film grown Condition of deposition P base = 1.5x10-6 mbar P sputtering = 4.0x10-3 mbar Sputtering Target Voltage (V) Current (A) Power (W) Sn 613 0.18 108 Nb 407 1.99 800 Thickness Nb = 4.5 Thickness Sn Time of sputtering: 2 minutes Nb 30 minutes multilayers deposition 1 turn of sample every 13 seconds Annealed after sputtering for 3 hours at 975 °C Thin films and new ideas for pushing the limits of RF superconductivity, Legnaro 9-12 October 2006

4 Results: X-ray diffraction
Sample M2 as deposited Sample M2 after annealing Sample M2 as deposited Sample M2 after annealing Thin films and new ideas for pushing the limits of RF superconductivity, Legnaro 9-12 October 2006

5 Results: Superconductive characteristic
Tc= 16.98 K DTc= 0.23 RRR= 2.13 Thin films and new ideas for pushing the limits of RF superconductivity, Legnaro 9-12 October 2006

6 Thanks for your patience…
Thin films and new ideas for pushing the limits of RF superconductivity, Legnaro 9-12 October 2006

7 Nb3Sn Phase diagram Thin films and new ideas for pushing the limits of RF superconductivity, Legnaro 9-12 October 2006


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