Download presentation
Presentation is loading. Please wait.
1
Day 14: October 8, 2010 Performance
ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 14: October 8, 2010 Performance Penn ESE370 Fall DeHon
2
Previously Delay as RC-charging Transistor Gate Capacitance
Drive Current As a function of geometry (W/L) Gate Topology Delay Penn ESE370 Fall DeHon
3
Today Miller Effect Sizing Large Fanout Data Dependent Delay
Asymmetry of Inputs Impact of P & N Mobility differences Large Fanin Penn ESE370 Fall DeHon
4
Gate-Drain Capacitance
What is the voltage across Vin—V2 When Vin=Vdd When Vin=Gnd What is DV across Vin—V2 when Vin switches from Vdd to Gnd? Penn ESE370 Fall DeHon
5
Miller Effect For an inverting gate
Capacitance between input and output must swing 2 Vhigh Or…acts as double-sized capacitor Penn ESE370 Fall DeHon
6
Transistor Sizing What happens to Ids as a function of W?
What happens to Cg as a function of W? Conclude: faster transistors present more load on their inputs Penn ESE370 Fall DeHon
7
First Order Delay R0 = Resistance of minimum size NMOS device
C0 = gate capacitance of minimum size NMOS device Rdrive = R0/W Cg = WC0 Penn ESE370 Fall DeHon
8
Inverter Sizing What is the impact of the delay on the middle inverter if double size of all the transistors? Penn ESE370 Fall DeHon
9
How Size Equal Rise and Fall mn=500cm2/Vs, mp=200cm2/Vs Rdrive=R0/2
Penn ESE370 Fall DeHon
10
Sample Gate Internal stages have delay External depend on load
Assume (guarantee) all inputs same load Penn ESE370 Fall DeHon
11
Large Fanout What is delay if must drive fanout=100?
Penn ESE370 Fall DeHon
12
What Delay? What is delay here? Penn ESE370 Fall DeHon
13
How Size How size transistors to minimize delay?
Penn ESE370 Fall DeHon
14
Try again What is the delay here? Penn ESE370 Fall DeHon
15
…and Again Delay here? Penn ESE370 Fall DeHon
16
Lesson Don’t drive large fanout with a single stage
Must scale up over a number of stages …but not too many Exact number will be technology dependent Penn ESE370 Fall DeHon
17
Lecture ended here Penn ESE370 Fall DeHon
18
Gates Penn ESE370 Fall DeHon
19
Data Dependent Delay Resistance depends on input values
delay depends on input data Penn ESE370 Fall DeHon
20
How Size Equalize rise/fall times Rdrive=R0/2
Penn ESE370 Fall DeHon
21
How Size For equal rise fall Rdrive=R0/2 Penn ESE370 Fall DeHon
22
Input Load Input capacitance in each case?
Penn ESE370 Fall DeHon
23
Observe Ratio of Input Load Capacitance to Output Drive Strength
Differs with gate function Some gates give more drive per capacitive load we pay Penn ESE370 Fall DeHon
24
Which Implementation is Faster?
Penn ESE370 Fall DeHon
25
Take Away? Penn ESE370 Fall DeHon
26
Input (A)Symmetry If one input is known to be later than other, does it matter where it goes? Penn ESE370 Fall DeHon
27
How Size Equalize rise/fall times Rdrive=R0/2
Penn ESE370 Fall DeHon
28
Increasing Fanin What happens to input capacitance as fanin (k) increases Keeping output drive the same E.g. Rdrive=R0/2 k-input nand gate has input capacitance: Penn ESE370 Fall DeHon
29
Fanin Gates slow down with fanin Less drive per input capacitance
Penn ESE370 Fall DeHon
30
Which is fastest? nand32 nand4-inv-nand4-inv-nand2 (nand2-inv)4-nand2
Penn ESE370 Fall DeHon
31
Lesson Large gates are slow / inefficient
High capacitive load / drive strength Small gates can be inefficient Need many stages Staging over moderate size gates minimizes delay Exact size will be technology dependent Penn ESE370 Fall DeHon
32
Admin Project 1 Out Fall Break on Monday Next Lecture Wednesday
2 week assignment Optimizing Performance Recommended milestones for next week Fall Break on Monday No class Next Lecture Wednesday Penn ESE370 Fall DeHon
33
Ideas First order reason in R0C0 units
Gates have different efficiencies Drive strength per unit input capacitance Greater N mobility (than P) favors nand over nor Large fanin and fanout slow gates Decompose into stages …but not too much Penn ESE370 Fall DeHon
Similar presentations
© 2025 SlidePlayer.com. Inc.
All rights reserved.