1. Semiconductor Substrate Production: Si, GaAs, InP, GaP, InAs, InSb…….
Lecture 2: Wafer and Epitaxy Techniques
Semiconductor Substrate Production:
Si, GaAs, InP, GaP, InAs, InSb…….
SiC, Sapphire, GaN
Wafer Growth:
Czochralski Growth (CZ)
Bridgman Growth of GaAs
Float Zone Growth
see Campbell Book pp for (2)(3)

2. Czochralski Growth (CZ)

4. 200 mm Si wafer CZ facility
300 mm Si wafer in manufacture

5. LEC =Liquid Encapsulated Czochralski growth GaAs CZ Schematic Picture
GaAs melts at 1238 C. The vapor of
Ga is less than atm, while the
vapor prssure of arsenic is about
10000 larger.

6. Better quality ? Epitaxy
GaAs MESFET commercial products made directly from GaAs substrate
InP MOSFET (made in Purdue) directly fabricated from InP substrate
(by Yanqing Wu)
Better quality ? Epitaxy

11. Still Active Research Field, e.g., APL
High-mobility two-dimensional electron
gas in InAlAs/InAs heterostructures grown
on virtual InAs substrates by molecular-beam
epitaxy
Y. Lin, J. A. Carlin, A. R. Arehart, A. M. Carlin,
and S. A. Ringel
Department of Electrical and Computer Engineering,
The Ohio State University, Columbus, Ohio 43210
(Received 6 July 2006; accepted 4 December 2006;
published online 5 January 2007)

12. Experts at Purdue
Prof. Woodall
Prof. Melloch

22. Homework:
Read Campbell Book:
Chapter pp
Chapter 14.11, pp