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IBM 90nm Test Chip Results

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Presentation on theme: "IBM 90nm Test Chip Results"— Presentation transcript:

1 IBM 90nm Test Chip Results
Preeti 06/014/2010

2 Clock-to-Data delay (0->1)
800 -> 570 (TMR = 40%) Delay = 5.1ns – 1.9ns (pad_delay) = 3.2ns CLOCK Q2_LVT Q0_RVT Delay = 5.1ns

3 Clock-to-Data delay (1->0)
1000 -> 500 (TMR = 100%) Delay = 7.4ns – 1.9ns (pad_delay) = 5.5ns CLOCK Q2_LVT Q0_RVT Delay = 7.4ns

4 Clock-to-Data Delays – Across Rp/Rap and TMRs

5 Measured Resistances Write current is measured to be around 290uA

6 Sense Amp Structure

7 Current Sensing Architecture

8 Sense Amp Delays (0->1)

9 Sense Amp Delays (1->0)

10 Pad Delay Measurement Slides

11 Pad Delay Measurements - Setup
1 GHz Sampling Real Time oscilloscope used to measure pad delays 500MHz Pulse Generator Real Time Oscilloscope TESTOUT REFERENCE TESTIN

12 Reference-to-TESTOUT delay without Chip (1)
Measuring Frequency – 3.33 MHz

13 Reference-to-TESTOUT delay without Chip (2)
Delay between the reference and TESTOUT is 5.3ns REFERENCE TESTOUT

14 Reference-to-TESTOUT delay with Chip (1)

15 Reference-to-TESTOUT delay with Chip (2)
Delay between the reference and TESTOUT is 7.2 ns Simulated Delay at TT corner = 1.84 ns Measured Pad-to-Pad Delay = 7.2 – 5.3 = 1.9 ns REFERENCE TESTOUT


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