1. an average length about 1.3 um and 80 nm in diameter.
Based antimonide nanowires
2- MBE growth conditions
1- Substrate preperation
Preperation steps
Growth temp.
480°C
V/III ratio
42:1
growth rate
500 nm/h InAs
1300 nm/h InAsSb
growth time
20 min InAs
1 h InAsSb
The growth of InAsSb NWs on Si substrate was carried out using VG V80h MBE system
Si(111)
sio2
Grown InAsSb NWs
InAs stub
SEM images with 30° tilt
an average length about 1.3 um and 80 nm in diameter.

2. Normalized PL spectra measured at 4k for InAs bulk and InAsSb NWs
3- X-Ray analysis
Sb composition of x = 0.07 which is calculated using the position of the InAsSb peak relative to the substrate peak
this is in good agreement with the results from PL.
4- PL analysis
µ-PL system
The PL measurements were performed at 4K, with the excitation laser at a wavelength around 808 nm, and with average excitation powers up to 330 mW.
Normalized PL spectra measured at 4k for InAs bulk and InAsSb NWs