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Day 15: October 13, 2010 Performance: Gates
ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 15: October 13, 2010 Performance: Gates Penn ESE370 Fall DeHon
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Previously Delay as RC-charging Transistor: Capacitance, Drive Current
As a function of geometry (W/L) Gate: Topology, Delay Penn ESE370 Fall DeHon
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First Order Delay t = R0C0 R0 = Resistance of minimum size NMOS device
C0 = gate capacitance of minimum size NMOS device Rdrive = R0/Wn Cg = WC0 Technology independent relative delay t = R0C0 Penn ESE370 Fall DeHon
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Try again What is the delay here? Penn ESE370 Fall DeHon
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Day 14: Lesson Don’t drive large fanout with a single stage
Must scale up over a number of stages …but not too many Exact number will be technology dependent Penn ESE370 Fall DeHon
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Today Miller Effect Sizing Large Fanout Data Dependent Delay
Asymmetry of Inputs Impact of P & N Mobility differences Large Fanin Penn ESE370 Fall DeHon
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Gates Penn ESE370 Fall DeHon
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Data Dependent Delay Resistance depends on input values
delay depends on input data t-delays assuming minsize? Penn ESE370 Fall DeHon
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How Size Equalize rise/fall times Rdrive=R0/2
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How Size For equal rise fall Rdrive=R0/2 Penn ESE370 Fall DeHon
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Input Load Input capacitance in each case?
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Observe Ratio of Input Load Capacitance to Output Drive Strength: CILoad/Ids Differs with gate function Some gates give more drive per capacitive load we pay Penn ESE370 Fall DeHon
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Which Implementation is Faster?
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Take Away? Penn ESE370 Fall DeHon
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Input (A)Symmetry If one input is known to be later than other, does it matter where it goes? Penn ESE370 Fall DeHon
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How Size Equalize rise/fall times Rdrive=R0/2
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Increasing Fanin What happens to input capacitance as fanin (k) increases Keeping output drive the same E.g. Rdrive=R0/2 k-input nand gate has input capacitance: Penn ESE370 Fall DeHon
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Fanin Gates slow down with fanin Less drive per input capacitance
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Which is Fastest? nand32 nand4-inv-nand4-inv-nand2 (nand2-inv)4-nand2
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Lesson Large gates are slow / inefficient
High capacitive load / drive strength Small gates can be inefficient Need many stages Staging over moderate size gates minimizes delay Exact size will be technology dependent Penn ESE370 Fall DeHon
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Admin Project 1 Out Townley office hours this week: 2 week assignment
Should have baseline done (today latest) Should be making list of ideas to make it fast Last two lectures might be relevant… Townley office hours this week: Today (Wed) 1-2pm Thursday 1-2pm Penn ESE370 Fall DeHon
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Ideas First order reason in t=R0C0 units
Gates have different efficiencies Drive strength per unit input capacitance Greater N mobility (than P) favors nand over nor Large fanin and fanout slow gates Decompose into stages …but not too much Penn ESE370 Fall DeHon
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