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Published byAudrey Perry Modified over 6 years ago
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Regions of Operation Vg VDD Vds/L = 1V/um Vd Vds = Vgs-Vt Vd VDD VDD
VDD VDD Scattering limited (OFF) triode Sub-Vt Vtp (Vgs-Vt )/L= 1V/um Weak/moderate inversion Saturation Vg Saturation Vg Vtn Weak/moderate inversion Scattering limited Sub-Vt triode (OFF) VDD Vg Vd Vd Id=(mnCox)(W/L)(Vgs-Vt-Vds/2) Vds(1+lVds) triode Id=(mnCox/2)(W/L)(Vgs-Vt)2(1+lVds) saturation Id=(CoxW/2)(Vgs-Vt)vscl(1+lVds) scattering limited Id=ISe(Vgs-Vt)/(nVT)(1+Vds/VA) sub-threshold None of these regions has a hard boundary, and the current varies smoothly from region to region. Note the symmetry between the NMOS and PMOS devices.
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