1. Synthesis and Applications of Semiconductor Nanowires
Nanoelectronics
Synthesis and Applications of Semiconductor Nanowires
Group 17
余承曄 F
Graduate Institute of Electronics Engineering, NTU

2. Outline Synthesis of semiconductor nanowires Electrical device
Nanoelectronics
Synthesis of semiconductor nanowires
Electrical device
Optical device
Nanowire sensor
Graduate Institute of Electronics Engineering, NTU

3. Laser-assisted Catalytic Growth (LCG)
Nanoelectronics
Growth system :
Nd-yttrium-aluminum-garnet laser (wavelength, 532 nm)
Graduate Institute of Electronics Engineering, NTU

4. Laser-assisted Catalytic Growth (LCG)
Nanoelectronics
Growth mechanism :
Vapor-liquid-solid (VLS) growth model
Catalyst : Fe, Ni, Au, …
Graduate Institute of Electronics Engineering, NTU

5. Laser-assisted Catalytic Growth (LCG)
Nanoelectronics
Si nanowires :
Scale bar:100nm
Scale bar:10nm
Graduate Institute of Electronics Engineering, NTU

6. Laser-assisted Catalytic Growth (LCG)
Nanoelectronics
Ge nanowires :
Scale bar:9nm
Scale bar:5nm
Graduate Institute of Electronics Engineering, NTU

7. Nanowire diameter control
Nanoelectronics
SiNW diameters grown from 5-, 10-, 20-, and 30-nm-diam Au nanoclusters.
Graduate Institute of Electronics Engineering, NTU

8. Solution-liquid-solid (SLS) Synthesis
Nanoelectronics
Growth of InP, InAs, and GaAs (III-V)
Low-temperature ( ~203°C)
Potential limitation：catalyst must melt below the solvent boiling point
Graduate Institute of Electronics Engineering, NTU

9. Thermal evaporation method
Nanoelectronics
Experimental apparatus:
furnace;
(2) quartz tube;
(3) quartz cover;
(4) ceramic boat;
(5) pure silicon powder;
(6) iron-patterned silicon substrate.
Graduate Institute of Electronics Engineering, NTU

10. Thermal evaporation method
Nanoelectronics
the nanowires are grown only within the patterned iron squares on the substrates.
The growth of the nanowires on the silicon substrates can be positioned and controlled by iron patterning of the substrates
Pre-patterned Fe on the growth surface
No laser need
Graduate Institute of Electronics Engineering, NTU

11. Template-assisted Synthesis
Nanoelectronics
Process flow for preparing ordered nanowires with a template
Graduate Institute of Electronics Engineering, NTU

12. Template-assisted Synthesis
Nanoelectronics
Graduate Institute of Electronics Engineering, NTU

13. low-temperature VLS method
Nanoelectronics
using low-melting-point metals, such as Ga, In, and Bi, as the solvent
SiHx(g)+xH(g) Ga-Si(l)+xH2(g)
Ga–Si alloy is possible at temperatures as low as 100 °C. Ga
Graduate Institute of Electronics Engineering, NTU

14. low-temperature VLS method
Nanoelectronics
nanowires with uniform diameters distributed around 6 nm using gallium as the molten solvent, at temperatures less than 400 °C in hydrogen plasma
Graduate Institute of Electronics Engineering, NTU

15. Nanowire superlattice
Nanoelectronics
Upon completion of the first growth step, a different material (red) can be
grown from the end of the nanowire.
Repetition of steps leads to a compositional superlattice within a single
nanowire.
Graduate Institute of Electronics Engineering, NTU

16. Nanowire superlattice
Nanoelectronics
GaAs/GaP nanowire junctions
Scale bar:10nm
Abrupt junction :
Nanowire diameter
Catalyst
Growth temperature
Graduate Institute of Electronics Engineering, NTU

17. Nanowire superlattice
Nanoelectronics
a 40-nm-diameter GaP(5)/GaAs(5)/GaP(5)/GaAs(5)/GaP(10)/GaAs(5)/GaP(20)/GaAs(5)/GaP(40)/GaAs(5)/GaP(5) superlattice
Graduate Institute of Electronics Engineering, NTU

18. Junction devices Nanoelectronics
Graduate Institute of Electronics Engineering, NTU

19. Bipolar Transistor Nanoelectronics
Graduate Institute of Electronics Engineering, NTU

20. Invertors Nanoelectronics
Graduate Institute of Electronics Engineering, NTU

21. PN junction & FETs Nanoelectronics
Graduate Institute of Electronics Engineering, NTU

22. Nano-logic gates Nanoelectronics
Graduate Institute of Electronics Engineering, NTU

23. Nanowire Computation Nanoelectronics
Graduate Institute of Electronics Engineering, NTU

24. Nanowire LEDs InP LED Nanoelectronics
Graduate Institute of Electronics Engineering, NTU

25. Nanowire LEDs Nanoelectronics
65(n)+68(p)nm
Peak at 820nm
39(n)+49(p)nm
Peak at 680nm
Bulk bandgap of InP :925nm
Graduate Institute of Electronics Engineering, NTU

26. Nanowire Sensor for PH Detection
Nanoelectronics
Graduate Institute of Electronics Engineering, NTU

27. Real-time detection of protein binding
Nanoelectronics
Graduate Institute of Electronics Engineering, NTU

28. Real-time detection of reversible protein binding
Nanoelectronics
Graduate Institute of Electronics Engineering, NTU

29. Real-time Detection of Ca2+ Ions
Nanoelectronics
Graduate Institute of Electronics Engineering, NTU

30. References 1. A. M. Morales and C. M. Lieber, Science 279, 210 (1998).
Nanoelectronics
1. A. M. Morales and C. M. Lieber, Science 279, 210 (1998).
2. M. S. Gudiksen et al., Nature 415, 617 (2002).
3. B. H. Hong et al., Science 294, 348 (2001).
4. T. Thurn-Albrecht et al., Science 290, 2126 (2000)
5. A. J. Yin et al., Applied Physics Letters 79, 1039 (2001).
6. M. Paulose et al., Applied Physics Letters 81, 153 (2002).
7. Y. Cui and C. M. Lieber, Science 291, 851 (2001).
8. Y. Huang et al., Science 294, 1313 (2001).
9. Y. Cui et al., Science 293, 1289 (2001).
Graduate Institute of Electronics Engineering, NTU

31. References
Nanoelectronics
10. M. K. Sunkara et al., Applied Physics Letters 79, 1546 (2001).
11. T. J. Trentlor et al., Science 270, 1791 (1995)
12. Yi Cui et al., Applied Physics Letters 78, 2214 (2001).
13. Z. H. Wu et al., Applied Physics Letters 81, 5177 (2002).
14. Qian Gu et al., Applied Physics Letters 76, 3020 (2000).
Graduate Institute of Electronics Engineering, NTU