1. Pt-dse NANO recipe 50 cycles
Tiffany W Huang
Ludwig Galambos

2. Wafer orientation and pattern
Wafer with 189 die. Die shown above.
Pillars with 14um, 10um, and 6um diameters
Pitches of 75um, 55um, and 35 um
Area etched ~ 650 mm2 (8.3%)
Average etch Depth = 9.95um/50cycles; Unif = 3.2%
Si ER = 3.98um/min
X Wafer center
X Wafer bottom
C-prime Si (100)

3. Full data

4. Sensofar measurements
Wafer Center um
Wafer Bottom
10.10 um

5. Wafer Bottom
10.08 um
10.10 um

6. Wafer Center 9.44 um
Wafer Center
10.00 um