Presentation is loading. Please wait.

Presentation is loading. Please wait.

Microstructures of GaSb grown on SiC and AlN Composite Substrates

Published byآیلین سمسار Modified over 5 years ago

Similar presentations

Presentation on theme: "Microstructures of GaSb grown on SiC and AlN Composite Substrates"— Presentation transcript:

1 Microstructures of GaSb grown on SiC and AlN Composite Substrates

2 Microstructure of SiC Composite Substrate
Spot Diameter: 0.5 mm

3 Microstructure of AlN Composite Substrate
Spot Diameter: 0.5 mm

4 Microstructure of GaSb grown on AlN Substrate
Experiment: Spot Diameter: 0.5 mm

5 Microstructure of GaSb grown on AlN Substrate
Spot Diameter: 0.5 mm Experiment:

6 Microstructure of GaSb grown on AlN Substrate
Experiment: Spot Diameter: 0.5 mm

7 Microstructure of GaSb grown on AlN Substrate
Experiment: Spot Diameter: 0.5 mm

8 Microstructure of GaSb grown on AlN Substrate
Experiment: Spot Diameter: 0.5 mm

9 Microstructure of GaSb grown on AlN Substrate
Experiment: Spot Diameter: 0.5 mm

10 Microstructure of GaSb grown on SiC Substrate
Experiment: Spot Diameter: 0.5 mm

11 Microstructure of GaSb grown on SiC Substrate
Experiment: Spot Diameter: 0.5 mm

12 Microstructure of GaSb grown on SiC Substrate
Experiment: Spot Diameter: 0.5 mm

13 Microstructure of GaSb grown on SiC Substrate
Experiment: Spot Diameter: 0.5 mm

14 Microstructure of GaSb grown on SiC Substrate
Experiment: Spot Diameter: 0.5 mm

15 Microstructure of GaSb grown on SiC Substrate
Experiment: Spot Diameter: 0.5 mm

16 Microstructure of re-crystallized GaSb (from Powder) on SiC Substrate
Experiment: Spot Diameter: 0.5 mm

Download ppt "Microstructures of GaSb grown on SiC and AlN Composite Substrates"

Similar presentations

Crystallographic Orientation Zbigniew Radzimski. Crystal Structure Unit cell Silicon.

Crystallographic Orientation Zbigniew Radzimski. Crystal Structure Unit cell Silicon.
Channeled Ni-YSZ and Co-YSZ Anodes produced from Directionally Solidified Eutectics: Microstructural Stability M. A. Laguna-Bercero, A. Larrea*, R. I.

Channeled Ni-YSZ and Co-YSZ Anodes produced from Directionally Solidified Eutectics: Microstructural Stability M. A. Laguna-Bercero, A. Larrea*, R. I.
The origin of rhyolitic spherulites at Rockhound State Park Nelia W. Dunbar Virginia T. McLemore New Mexico Bureau of Geology and Mineral Resources New.

The origin of rhyolitic spherulites at Rockhound State Park Nelia W. Dunbar Virginia T. McLemore New Mexico Bureau of Geology and Mineral Resources New.
1. What number does the following array represent?

1. What number does the following array represent?
BOWLINGPARTS.COM Machine parts & services Specials Heavy duty Original standard.

BOWLINGPARTS.COM Machine parts & services Specials Heavy duty Original standard.
Nanopatterning of Silicon Carbide by UV and Visible Lasers. By Arvind Battula 12/02/2004.

Nanopatterning of Silicon Carbide by UV and Visible Lasers. By Arvind Battula 12/02/2004.
Ceramics for Environment

Ceramics for Environment
Composite Materials A novel interesting field Rui Zhang

Composite Materials A novel interesting field Rui Zhang
Metal-insulator thin films have been studied for making self-patterning nano-templates and for controlling attachment strength on template surfaces. These.

Metal-insulator thin films have been studied for making self-patterning nano-templates and for controlling attachment strength on template surfaces. These.
Thin ladder development Status of ladder development for the thin ladderfest.

Thin ladder development Status of ladder development for the thin ladderfest.
CIRCUMFERENCE OF A CIRCLE LEARNING TARGET 4: I CAN SOLVE PROBLEMS USING AREA AND CIRCUMFERENCE OF A CIRCLE.

CIRCUMFERENCE OF A CIRCLE LEARNING TARGET 4: I CAN SOLVE PROBLEMS USING AREA AND CIRCUMFERENCE OF A CIRCLE.
Plasma Arc Lamp Operation

Plasma Arc Lamp Operation
Review of Results First Wall Helium Management & Refractory Armored Materials L L Snead, T. Hinoki, J. Hunn, C. Blue, N. Hashimoto (ORNL) R. Raffray (UCLA)

Review of Results First Wall Helium Management & Refractory Armored Materials L L Snead, T. Hinoki, J. Hunn, C. Blue, N. Hashimoto (ORNL) R. Raffray (UCLA)
SUP Seminar on High Performance Ceramics and Heterogeneous Materials

SUP Seminar on High Performance Ceramics and Heterogeneous Materials
Dilbert. Dilbert Wal-Mart 9-8-2013 Apple Computer Started about the same time as Microsoft Was founded by Steve Jobs and Steve Wosniak in a garage.

Dilbert. Dilbert Wal-Mart Apple Computer Started about the same time as Microsoft Was founded by Steve Jobs and Steve Wosniak in a garage.
Integrated Materials Plan Progress: Helium Blistering and Refractory Armored Materials Lance L Snead High Average Power Lasers Workshop December 6, 2002.

Integrated Materials Plan Progress: Helium Blistering and Refractory Armored Materials Lance L Snead High Average Power Lasers Workshop December 6, 2002.
2003/5/12 國立彰化師範大學 - 屠嫚琳 1 The Blue Laser Diode 屠嫚琳 Man-Lin Tu.

2003/5/12 國立彰化師範大學 - 屠嫚琳 1 The Blue Laser Diode 屠嫚琳 Man-Lin Tu.
Copper based composite: L-Cop Cu High thermal Conductive Cu 2 O Low thermal expansive Anna malai Industrial Engineering Material Science.

Copper based composite: L-Cop Cu High thermal Conductive Cu 2 O Low thermal expansive Anna malai Industrial Engineering Material Science.
Copper (Cu) FCC 0.128 nm atomic radii Silver (Ag) FCC 0.144 nm atomic radii Mix 50% Ag + 50% Cu, gives two solid phases (  and  )  (saturated - mostly.

Copper (Cu) FCC nm atomic radii Silver (Ag) FCC nm atomic radii Mix 50% Ag + 50% Cu, gives two solid phases (  and  )  (saturated - mostly.
Materials Conductive materials – valence band overlaps the conduction band Conductive materials – valence band overlaps the conduction band Non conductive.

Materials Conductive materials – valence band overlaps the conduction band Conductive materials – valence band overlaps the conduction band Non conductive.

Similar presentations

Ads by Google