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AKT211 – CAO 07 – Computer Memory
Ghifar Parahyangan Catholic University Okt 24, 2011
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Feedback Review using B. Indonesia for text in the presentation slides
make slower and clearer the explanation of the course materials (x) (v)
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Outline Computer Memory System RAM Basic Technology
Memory Characteristics Memory Hierarchy RAM Basic Technology Semiconductor SRAM vs DRAM Advanced RAM Organization SDRAM vs DDR-RAM
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COMPUTER MEMORY SYSTEM
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Characteristics
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Location CPU Internal External
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Capacity Word size Number of words The natural unit of organization
or Bytes
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Unit of Transfer Internal External Addressable unit
Usually governed by data bus width External Usually a block which is much larger than a word Addressable unit Smallest location which can be uniquely addressed Word internally Cluster on M$ disks
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Access Methods (1) Sequential Direct
Start at the beginning and read through in order Access time depends on location of data and previous location e.g. tape Direct Individual blocks have unique address Access is by jumping to vicinity plus sequential search Access time depends on location and previous location e.g. disk
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Access Methods (2) Random Associative
Individual addresses identify locations exactly Access time is independent of location or previous access e.g. RAM Associative Data is located by a comparison with contents of a portion of the store e.g. cache
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Memory Hierarchy Registers Internal or Main memory External memory
In CPU Internal or Main memory May include one or more levels of cache “RAM” External memory Backing store
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Memory Hierarchy - Diagram
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RAM BASIC TECHNOLOGY
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Semiconductor Main Memory
universally used as RAM basic technology The basic element : “memory cell” Read/Write Volatile Temporary storage Static or dynamic
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Memory Cell Operation
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Semiconductor Memory Types
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Dynamic RAM Bits stored as charge in capacitors Charges leak
Need refreshing even when powered Simpler construction Smaller per bit Less expensive Need refresh circuits Slower Main memory Essentially analogue Level of charge determines value
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Dynamic RAM Structure Address line active when bit read or written
Transistor switch closed (current flows) Write Voltage to bit line High for 1 low for 0 Then signal address line Transfers charge to capacitor Read Address line selected transistor turns on Charge from capacitor fed via bit line to sense amplifier Compares with reference value to determine 0 or 1 Capacitor charge must be restored
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Static RAM Bits stored as on/off switches No charges to leak
No refreshing needed when powered More complex construction Larger per bit More expensive Does not need refresh circuits Faster Cache Digital Uses flip-flops
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Static RAM Structure
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SRAM v DRAM Both volatile Dynamic cell Static
Power needed to preserve data Dynamic cell Simpler to build, smaller More dense Less expensive Needs refresh Larger memory units Static Faster Cache
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ADVANCED RAM ORGANIZATION
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Synchronous DRAM (SDRAM)
Access is synchronized with an external clock Conventional DRAM is asynchronous, CPU must wait the access time delay With SDRAM, CPU doesn’t have to wait, it can do something else Takes advantage of the burst mode concept to greatly improve performance staying on the row containing the requested bit and moving rapidly through the columns, reading each bits as it goes Idea : most of the time the data needed by the CPU will be in sequence ! Maximum transfer rate to L2 cache : 528 MBps
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SDRAM - Diagram
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SDRAM Read Timing
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DDR-SDRAM Double Data Rate Synchronous Dynamic RAM
Higher bandwidth => greater speed Higher transfer rate Uses double pumping transferring data on both the rising and falling edges of the clock signal Classes : DDR1, DDR2, DDR3 Neither of which are either forward or backward compatible !
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DDR SDRAM Read Timing DDR SDRAM Read Timing
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Any Question ?
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THANK YOU
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