1. Lecture 9 Heterojunction Bipolar Transistor (HBT)
Bell Labs Bardeen and Brattain Ge point-contact transistor
Bell Labs Shockley’s classic paper on junction diode and transistors
Bell Labs the first junction bipolar transistor

2. See Sze&Ng pp.243-254 From x=0 to x=W, the injected minority-carriers
Distribution (electrons) is governed by the
Continuity equation:

3. In normal mode, VBC<0 and np(W)=0
Base transport factor aT=InC/InE
For W<<Ln, InC ~=InE

6. Common-base
Current gain
Emitter injection
efficiency
Common-emitter
Current gain

18. SiGe HBT Technology

21. GaAs HBT Technology

25. InP HBT Technology

26. The world's fastest transisitor has a frequency of 509 gigahertz.
CHAMPAIGN, Ill. — Researchers at the University of Illinois at Urbana-Champaign
have broken their own record for the world’s fastest transistor.

27. Homework:
Read and study
“Physics of Semiconductor Devices” Chapter 5 Bipolar Transistors
“High-speed semiconductor devices” Chapter 6 Bipolar Transistors
(2) Due on February 7, 2019 Thursday