1. Lab Course Dry Etching
Goal: Patterning of Si wafer utilizing resist mask and various dry etching systems
Parallel plate reactor (group I & III)
SF6
P = ? mbar
Prf = ? W
rSi = ? nm/s (SEM inspection)
rSi = ? nm/s (profiler + ellipsometer)
S = rSi / rresist ≈ ?
SEM picture of cross section
indicating wm‘, dm‘, de , ue
etch anisotropy:
a = (de – ue) / de = ?
pattern fidelity:
f = ?
Wagner / Meyners

2. Lab Course Dry Etching ICP - RIE (group II + IV)
Passivation: gas?, Pcoil = ? W, Pbias = ? W
Depassivation: gas?, Pcoil = ? W, Pbias = ? W
Etching: gas?, Pcoil = ? W, PRFbias = ? W
Evacuation ?
SEM picture of cross section
indicating wm‘, dm‘, de , ue
etch anisotropy:
a = (de – ue) / de = ?
pattern fidelity:
f = ?
rSi = ? nm/s (SEM inspection)
rSi = ? nm/s (profiler + ellipsometer)
S = ?
Wagner / Meyners
Micro / Nanosystems Technology

3. Lab Course Dry Etching
Comparison of RIE and ICP-RIE (will be done during lecture):
etch rate, selectivity, anisotropy, pattern fidelity?
Side note:
optical measurements and profilometer measurements probably do not exactly fit results from SEM inspection due to lateral variation of sample properties across wafer (reduced gas exchange between lines and spaces, resist thickness variation)
Wagner / Meyners
Micro / Nanosystems Technology