1. Microelectronics Research Group
FORTH/IESL
20 person-team
Since
1986
Microelectronics Research Group
6 senior researchers
5 technical staff
+ students and post-docs
Compound semiconductors
GaAs, SiC, GaN Si
Objective : material and device technology of compound semiconductors

2. Unique facility in Greece
Material
Growth
GaAs
SiC
GaN
Characterisation
Device
processing
Microelectronics
HEMTs, MMICs,
RF-MEMS
Optoelectronics
LDs, LEDs, Detectors

3. Equipment I 200 m2 of clean rooms (class 1000) GaAs SiC GaN
3 molecular beam epitaxy systems

4. Equipment II
Full processing line for microelectronic and optoelectronic devices
Lithography down to 0.3 mm
E-gun metal evaporator
UV mask aligner
PECVD
RIE

5. Equipment III Characterisation Optical (including at cryogenic temp.)
Structural (AFM, XRD…)
Electrical (including RF-measurements
up to 20 GHz)