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External Modulation OEIC Wavelength Converters
Task Area: [3] Jon Barton, Matt Sysak, Jeff Henness, John Hutchinson (Intel), Larry Coldren, Dan Blumenthal University of California Santa Barbara, CA Tel: (805) ;
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Outline Objective/Scope: Approach: Major Accomplishments: Issues:
To pursue alternative wavelength converter designs to achieve higher speed, chirp tailoring and wavelength monitoring capabilities Approach: Integrated external modulators Major Accomplishments: 1st Generation OEIC-WC mask fabricated – using laser-EA modulator devices currently in process Issues: Drive voltage - MQW design Bandwidth – traveling wave to reach > 10 GHz
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Wavelength Converter Designs
Direct Modulated SGDBR Integrated External Modulator SGDBR SGDBR Post Amp SOA Front Mirror Gain Phase Back Mirror EAM Front Mirror Gain Phase Back Mirror Preamplifier SOA Photodetector Preamplifier SOA Photodetector
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External modulators for OEICs WC
Electro-Absorption (EA) Modulators (Franz-Keldysh and MQW types with lumped and Traveling wave electrodes) Tandem EA modulators for chirp compensation Mach-Zehnder modulators for high speed, low drive voltage, low photocurrent generation and chirp tailorability EA EA
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OEIC-MOD Equivalent Circuit & Operation
Detector Mod Pindet Pout R Vm -Vb Pinmod Detector For EAM, Pindet >> Pinmod to avoid saturation (or kill DC photocurrent in EAM) For MZ reduced photocurrent issue (permits higher laser power – modulator gain) Mod. Combined EAM-detector and EAM shown by Hsu-feng Chou
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Reduction in Photocurrent Study
Goal: Reduce effective carrier lifetime significantly below the device transit time. Propose use of thermally stable Ion Implantation to produce regions of high resistivity through introduction of mid-gap energy levels. EA Modulator h+ p - InP hv implant n - InP e-
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OEIC-Mod ac Equivalent Circuit
CEAM 0.3pF CPhotoDetector 0.2pF 50Ω Best case lumped element devices limited to approximately 6 GHz Model verified using P-Spice Equivalent Circuit Model for OEIC
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Lumped EAM modulator performance
Typical bandwidth measurement for a lumped 250m long device
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Traveling-wave EAM Initial work funded by RFLICS PMGI bridge Waveguide
n-contact p-contact CPW feedline G S Au PMGI N-contact P-contact Initial work funded by RFLICS
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Traveling-wave rf response
Frequency (GHz) -50 -45 -40 -35 -30 -25 10 20 30 40 50 Relative EO- frequency response open 50 ohm 35 ohm Dot curve : experiment (35 Ohm) The bandwidth : > 30GHz -3dB 50 termination : -6 dB 40GHz from D.C. Velocity mismatch & microwave loss : -2.0dB Initial work funded by RFLICS
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Waveguide Photodetector Performance
Franz-Keldysh waveguide detectors Very linear response High saturation current OEIC detector requires mW input power (to get mA of current) to drive modulator or gain section 10 20 30 40 50 60 70 80 5 15 EAM photocurrent (mA) Input optical power (au) SOA Mod
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First Generation OEIC-EAM Devices
Pre Amp SOA Pre Amp SOA Photodetector Photodetector Pre Amp SOA First Generation Devices Designed and in Process
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Alternative OEIC Solutions
Integrated Mach Zehnder SGDBR MZ Modulator Front Mirror Gain Phase Back Mirror Preamplifier SOA Photodetector
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Mach-Zehnder Based Devices
Mach Zehnder Device Based Wavelength Converters Better Power handling capability than EA Modulators – low photocurrent generation Chirp tailorability – increased reach Low Drive Voltage Vp < 3V High Bandwidth > 10 GHz Wide Tuning Range
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Integrated MZ Layout SOA SGDBR Mach-Zehnder 1x2 MMI splitter
Lumped electrode Mach-Zehnder Mach-Zehnder 10 µm 1x2 MMI splitter 2x2 combiner Phase shifter Tunable MMI Lumped MZ Pads
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Integrated Mach-Zehnder Results
Initial work funded by RFLICS
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Traveling-Wave Mach-Zehnder
Distributed contacts )) ( ) 1.4 optical n electrical (n L c B group - = p Initial work funded by RFLICS
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Summary/Future Work Preliminary Circuit Modeling completed for devices
Design completed and Processing started on 1st Generation OEIC using tandem external EA-modulators Consideration of Mach-Zehnder based OE Wavelength converters and traveling-wave devices
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