Presentation is loading. Please wait.

Presentation is loading. Please wait.

IGBT: Insulated-Gate Bipolar Transistor

Published byEzra Devereux Modified over 10 years ago

Similar presentations

Presentation on theme: "IGBT: Insulated-Gate Bipolar Transistor"— Presentation transcript:

1 IGBT: Insulated-Gate Bipolar Transistor
Combination BJT and MOSFET High Input Impedance (MOSFET) Low On-state Conduction Losses (BJT) High Voltage and Current Ratings Symbol ECE 442 Power Electronics

2 Cross-Sectional View of an IGBT
Metal Silicon Dioxide Metal ECE 442 Power Electronics

3 IGBT Equivalent Circuit for VGE<VT
+ VCC IEPNP IBPNP ICNPN Leakage Current ICPNP IBNPN Both transistors are OFF IENPN IRBE ECE 442 Power Electronics

4 IGBT Equivalent Circuit for VGE>VT
+ VCC PNP transistor turns ON, RMOD decreases due to carrier injection from the PNP Emitter. NPN Transistor becomes forward biased at the BE, drawing current from the Base of the PNP transistor. MOS transistor conducts, drawing current from the Base of the PNP transistor. ECE 442 Power Electronics

5 Channel is Induced When VGE>VT
RMOD PNP electrons NPN RBE Induced Channel ECE 442 Power Electronics

6 IGBT Output Characteristics
Follows an SCR characteristic ECE 442 Power Electronics

7 IGBT Transfer Characteristic
ECE 442 Power Electronics

8 IGBT Used as a Switch ECE 442 Power Electronics

9 Fairchild FGA25N120AND IGBT
ECE 442 Power Electronics

10 ECE 442 Power Electronics

11 ECE 442 Power Electronics

12 ECE 442 Power Electronics

13 ECE 442 Power Electronics

14 ECE 442 Power Electronics

15 ECE 442 Power Electronics

Download ppt "IGBT: Insulated-Gate Bipolar Transistor"

Similar presentations

ECE 442 Power Electronics1 Two Devices on a Common Heat Sink Thermal Model.

ECE 442 Power Electronics1 Two Devices on a Common Heat Sink Thermal Model.
POWER ELECTRONICS Instructor: Eng.Moayed N. EL Mobaied The Islamic University of Gaza Faculty of Engineering Electrical Engineering Department بسم الله.

POWER ELECTRONICS Instructor: Eng.Moayed N. EL Mobaied The Islamic University of Gaza Faculty of Engineering Electrical Engineering Department بسم الله.
Power Semiconductor Systems I

Power Semiconductor Systems I
ECE 442 Power Electronics1 Compact Fluorescent Lamps (CFLs) Advantages over incandescent lamps –Energy savings –Longer lifetime Disadvantages over incandescent.

ECE 442 Power Electronics1 Compact Fluorescent Lamps (CFLs) Advantages over incandescent lamps –Energy savings –Longer lifetime Disadvantages over incandescent.
1 LINLITHGOW ACADEMY PHYSICS DEPARTMENT MOSFETs 2 MOSFETS: CONTENT STATEMENTS Describe the structure of an n-channel enhancement MOSFET using the terms:

1 LINLITHGOW ACADEMY PHYSICS DEPARTMENT MOSFETs 2 MOSFETS: CONTENT STATEMENTS Describe the structure of an n-channel enhancement MOSFET using the terms:
CONTROLLABLE SWITCHES

CONTROLLABLE SWITCHES
Insulated Gate Bipolar Transistors (IGBTs)

Insulated Gate Bipolar Transistors (IGBTs)
Bipolar Junction Transistors ECE 2204. Three Terminal Device Terminals ▫Emitter  The dominant carriers are emitted from the region (equivalent to the.

Bipolar Junction Transistors ECE Three Terminal Device Terminals ▫Emitter  The dominant carriers are emitted from the region (equivalent to the.
BIJUNCTION TRANSISTOR

BIJUNCTION TRANSISTOR
ECE 442 Power Electronics1 Bipolar Junction Transistors (BJT) NPNPNP.

ECE 442 Power Electronics1 Bipolar Junction Transistors (BJT) NPNPNP.
Gain medium Incoherent Light Coherent Light ECE 663 Transistor/switch/amplifier – a 3 terminal device Source Drain Gate Valve Artery Vein Emitter Collector.

Gain medium Incoherent Light Coherent Light ECE 663 Transistor/switch/amplifier – a 3 terminal device Source Drain Gate Valve Artery Vein Emitter Collector.
Bipolar Junction Transistors: Operation, Circuit Models, and Applications AC Power CHAPTER 10.

Bipolar Junction Transistors: Operation, Circuit Models, and Applications AC Power CHAPTER 10.
Transistors These are three terminal devices, where the current or voltage at one terminal, the input terminal, controls the flow of current between the.

Transistors These are three terminal devices, where the current or voltage at one terminal, the input terminal, controls the flow of current between the.
Chapter 13 : Bipolar Junction Transistors 13-0 Introduction 13-1 Current and voltage relationships 13-2 Common –emitter characteristics 13-3 Load –line.

Chapter 13 : Bipolar Junction Transistors 13-0 Introduction 13-1 Current and voltage relationships 13-2 Common –emitter characteristics 13-3 Load –line.
The Bipolar Junction Transistor

The Bipolar Junction Transistor
MOSFETs Monday 19 th September. MOSFETs Monday 19 th September In this presentation we will look at the following: State the main differences between.

MOSFETs Monday 19 th September. MOSFETs Monday 19 th September In this presentation we will look at the following: State the main differences between.
Bipolar Junction Transistors (BJT) NPNPNP. BJT Cross-Sections NPN PNP Emitter Collector.

Bipolar Junction Transistors (BJT) NPNPNP. BJT Cross-Sections NPN PNP Emitter Collector.
Chap. 5 Field-effect transistors (FET) Importance for LSI/VLSI –Low fabrication cost –Small size –Low power consumption Applications –Microprocessors –Memories.

Chap. 5 Field-effect transistors (FET) Importance for LSI/VLSI –Low fabrication cost –Small size –Low power consumption Applications –Microprocessors –Memories.
Transistors in Parallel. Why connect transistors in parallel? Connect in parallel to handle high currents Need to be closely matched for equal current.

Transistors in Parallel. Why connect transistors in parallel? Connect in parallel to handle high currents Need to be closely matched for equal current.
Principles & Applications

Principles & Applications

Similar presentations

Ads by Google