1. APRIL 1964, A McGRAW-HILL PUBLICATION
PAST:
United States Patent Office ,271,591
Patented Sept. 6, 1966
SYMMETRICAL CURRENT CONTROLLING DEVICE
Stanford R. Ovshinsky, Birmingham, Mich.
This invention has to do with solid state current controlling devices for electrical circuits and this application is a continuation-in-part of my co-pending applications Ser. No. 118,642, filed June 21, 1961, now abandoned; …
APRIL 1964, A McGRAW-HILL PUBLICATION
REVERSIBLE ELECTRICAL SWITCHING
PHENOMENA IN DISORDERED STRUCTURES
Stanford R. Ovshinsky
Energy Conversion Devices, Inc., Troy, MI
(Received 23 August 1968)
A rapid and reversible transition between a highly resistive and conductive state effected by an electric field, which we have observed in various types of disordered semiconducting material, is described in detail. The …
PHYSICAL REVIEW LETTERS
VOLUME 21, NUMBER NOVEMBER 1968
THE TIMES Jan. 30, 1963
ELECTRONIC MACHINE’S LICENSING PACT
On November 30 (1962) last the Electronic Machine Company acquired from Energy Conversion Laboratories, Inc. of Detroit, an exclusive license to develop, manufacture and market in Great Britain and Eire a new generation of solid-state switching devices which could very well achieve as broad a range of application in the control of alternating current as transistors have found in direct current circuitry. Special arrangements also exist between the two firms regarding the Commonwealth and European countries.

2. PAST: PRESENT: The Ovshinsky Switch
In 1961, Stan Ovshinsky and Laurence Pellier showed that the electron beam caused reversible phase transition in our atomically designed chalcogenide materials
2007 Non-Volatile Semiconductor Memory Workshop
22nd IEEE NVSMW August 26th – 30th, 2007 Hyatt Regency, Monterey, CA
The organization was not prepared for the overflow audience of over 500 people who attended.
From Proceedings of the Fifth Annual National Conference on Industrial Research, Chicago, Illinois, Sept , 1969
(Patent application, August 22, 1968)
The Ovshinsky Switch
by Stanford Ovshinsky
The material is switched, we have the basis for an optical mass memory. Densely packed data dots less than 2 microns in diameter are written with a finely-focused laser beam and can then be read out optically, such as by sensing the change in transmissivity or reflectivity as well as scattering that occurs in the material when it is switches. Because memory switching is reversible, the data can be erased at will and new data written in the same location. In other words, the memory film is a beam-addressable, beam-alterable mass memory medium.

3. PRESENT: Intel (Joint Venture Partner & Licensee)
Ovonyx Licensees
Intel (Joint Venture Partner & Licensee)
BAE
STMicroelectronics
Nanochip
Elpida
Samsung
Qimonda
Optical Phase Change Memory Licensees
Matsushita Electric Pioneer
Sony Teijin
Toshiba Plasmon
Ricoh Toray
TDK

4. Intel to sample phase change memory in 1H 2007
PRESENT:
Intel to sample phase change memory in 1H 2007
By Peter Clarke (03/06/ :44 PM EST)
“Ed Doller, chief technology officer of the flash memory group at Intel Corp., told the meeting that Intel's 128-Mbit had demonstrated 100 million cycles endurance and much greater than 10 years data retention. ‘The phase-change memory gets pretty close to Nirvana,’ Doller said.”
(Excerpt from the meeting for analysts & press held in California on March 6, 2007.)

5. Hynix unveils plan to become world’s top chipmaker
PRESENT:
Hynix unveils plan to become world’s top chipmaker
AFP, Seoul, Thursday, Jul 26, 2007, Page 10
“Hynix, now the world’s fifth largest memory chipmaker, said it would boost sales from last year’s US$7.7 billion to US$18 billion by 2010 and to US$25 billion by …It aims to produce a next-generation memory chip called Phase-change Random Access Memory (PRAM) by Industry analysts expect it to become the main memory device, replacing high density flash memories, within the next decade.”

6. Microsoft, Amid Dwindling Interest, Talks Up Computing as a Career
Future of Ovonic Optical/Electronic Devices & Circuits
Microsoft, Amid Dwindling Interest,
Talks Up Computing as a Career
“If you invent a breakthrough in artificial intelligence, so machines can learn,” Mr. Gates responded, “that is worth 10 Microsofts.”
Page 2
“If you invent a breakthrough in artificial intelligence, so machines can learn,’ Mr. Gates responded, “that is worth 10 Microsofts.”
End of Article
Excerpt from Article from The New York Times – March 1, 2004

7. FUTURE:
New Physics Make it Possible to Transcend Present Day Transistors and Computers
Rich and deep new physics is being used to provide unique new Ovonic Quantum Control Device.
Ovonic 3-Terminal
Modulation of threshold voltage
Latching/non-latching threshold switching
Smaller and faster (gigacycles instead of megacycles) than a transistor
50 times greater current of a transistor
The world’s most powerful solid state plasma by many orders of magnitude

8. FUTURE: Proof of Principle Devices in the Development Stage
Conventional Silicon Computers
Each Element:
Computes based
on single bit
(binary)
manipulation
Manipulates data
sequentially, bit
by bit
Ovonic Thin-Film Cognitive Computer
Can Combine Both Optical & Electrical Computing
Manipulates, processes and stores information in a non-volatile
radiation hard and multilevel manner
Hardware and software are unified
Low voltage and low current operation
Performs arithmetic operations (+,-,x,) on multi-bit numbers
(0,1,2,3…n)
Performs modular arithmetic – easily factors large numbers
Combines logic and memory in a single device
Executes multi-valued logic
Stores the result in a non-volatile manner
Simple, powerful encryption
Acts as a neurosynaptic cell; i.e. possesses intelligence capability
Scales down to angstrom dimensions; huge density
Ovonic Threshold and Modulating 3-Terminal Device so fast
they’ve never been measured
All Devices capable of massive parallelism and interacting
functionality

9. Mechanism and Operation of Ovonic™ Cognitive Device
Past, Present and the FUTURE:
All thin-film nanocircuits based upon the new physics and unique
multifunctionality discussed in this talk.
Various pulsing protocols are used depending upon the nature of the task performed
NUMBER OF CONSTANT AMPLITUDE PULSES
Energy Conversion Devices, Inc.