1. Substrate Nonuniformity And Other Structural Effects
CHAPTER 9
Substrate Nonuniformity And Other Structural
Effects

2. 9.1 Introduction

3. 9.1 Introduction
Figure 9.1
Cross section of the semiconduc- tor part of a typical device (a)
Long channel, (b) short channel.

4. 9.2 Ion implantation and substrate nonuniformity

5. 9.2 Ion Implantation and Substrate Nonuniformity

6. 9.3 Substrate transverse nonuniformity

7. 9.3.1 preliminaries

8. 9.3.1 peliminaries

9. 9.3.1 peliminaries

10. 9.3.2 Threshold Voltage

11. 9.3.2 Threshold Voltage

12. 9.3.2 Threshold Voltage

13. 9.3.2 Threshold Voltage

14. 9.3.2 Threshold Voltage

15. 9.3.2 Threshold Voltage

16. 9.3.2 Threshold Voltage

17. 9.3.2 Threshold Voltage

18. 9.3.2 Threshold Voltage

19. 9.3.2 Threshold Voltage

20. 9.3.3 Drain Current

21. 9.3.4 Buried-Chanel Devices

22. 9.3.4 Buried-Chanel Devices

23. 9.3.4 Buried-Chanel Devices

24. 9.3.4 Buried-Chanel Devices

25. 9.4 Substrate Lateral Nonuniformity

26. 9.4 Substrate Lateral Nonuniformity

27. 9.4 Substrate Lateral Nonuniformity

28. 9.4 Substrate Lateral Nonuniformity

29. 9.4 Substrate Lateral Nonuniformity

30. 9.4 Substrate Lateral Nonuniformity

31. 9.4 Substrate Lateral Nonuniformity

32. 9.5 Well Proximity Effect

33. 9.5 Well Proximity Effect

34. 9.5 Well Proximity Effect

35. 9.5 Well Proximity Effect

36. 9.5 Well Proximity Effect

37. 9.5 Well Proximity Effect

38. 9.6 Stress Effects

39. 9.6 Stress Effects

40. 9.6 Stress Effects

41. 9.7 statistical Variability

42. 9.7 Statistical Variability

43. 9.7 Statistical Variability

44. 9.7 Statistical Variability

45. 9.7 Statistical Variability